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研究生：	戴志偉 Chih-Wei Tai
論文名稱：	非晶矽、微晶矽之應力分析於太陽能電池與薄膜電晶體應用 Mechanical Stress Analysis of Amorphous and Microcrystalline Silicon in Solar Cells and Thin Film Transistors Applications
指導教授：	李敏鴻 Lee, Min-Hung
學位類別：	碩士 Master
系所名稱：	光電工程研究所 Graduate Institute of Electro-Optical Engineering
論文出版年：	2010
畢業學年度：	99
語文別：	中文
論文頁數：	108
中文關鍵詞：	應力行為、異質接面、非晶矽、微晶矽
英文關鍵詞：	Mechanical Stress, Heterojunction, Amorphous Silicon, Microcrystalline Silicon
論文種類：	學術論文
相關次數：	點閱：161 下載：0
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總目錄
第 一 章 、 緒 論    … … … … … … … … … … … … … … … … … . 1
1  非晶矽、微晶矽材料分  …………………………………………….1
1.1  非晶矽材料分析  …………………………………………….1
1.2  微晶矽材料分析  …………………………………………….2
2  非晶矽與微晶矽材料之應用  ……………………………………...3
2.1  異質接面太陽能電池  ……………………………………….3
2.2  可撓曲薄膜電晶體  ………………………………………….5

第二章、異質接面矽基太陽能電池原理與製作  ……………………..7
1  異質接面矽基太陽能電池簡介  …………………………………...7
2 異質接面矽基太陽能電池(HIT)設計原理  ……………………….10
2.1  傳統的異質接面太陽能電池(p+ a-Si/n type c-Si) ………...10
2.2  新型態異質接面太陽能電池原理  ………………………...11
2.3  表面粗糙化處理(textured)  …………………………………13
2.4  背面電場(back surface filed BSF) ………………………….14
2.5  透明導電膜(transparent conductive oxide TCO) …………...16
2.6  原理總結  …………………………………………………...16
2-3  異質接面矽基(HIT)製程  ………………………………………...17
3.1  背面電場(BSF)效應之討論  ……………………………….20
3.2  不同沉積溫度、化學氧化物保護層與有無氫氣鈍化  ……21
3.3  不同矽晶圓品質與有無粗糙化之討論  …………………...23
3.4  結論  效率 13.82%異質接面太陽能電池  …………………26

第三章、模擬異質接面太陽能電池在應力下的特性  ………………27
1  構想背景與簡介  ………………………………………………….27
3-2  實驗設計  ………………………………………………………….28
3  異質接面太陽能電池模擬參數設定  …………………………….29
3.1  氫化非晶矽材料設定  ……………………………………...29
3.2  異質接面太陽能電池材料物理參數設定  ………………...32
4  實驗流程步驟  ……………………………………………………33
4.1  模擬 Sanyo 異質接面結構確定模型正確  …………………33
4.2 ANSYS 模擬各吸收層厚度在應力下的分佈  ………………34
4.3  計算形變量與能帶關係  ……………………………………36
4.4  太陽能電池在應力下的電性表現  …………………………36
5  結論  ……………………………………………………………….38

第四章、微晶矽薄膜電晶體機械與電的可靠度  …………………….39
1  研究背景簡介  …………………………………………………….39
2  微晶矽薄膜電晶體  ……………………………………………….41
3  下閘極微晶矽與非晶矽薄膜電晶體電性比較  ………………….42
3.1  下閘極微晶矽與非晶矽薄膜電晶體結構  ………………...42
3.2  HC 下閘極微晶矽與非晶矽薄膜電晶體電性表現  ……….43
3.3  PBTI 下閘極微晶矽與非晶矽薄膜電晶體電性表現  ……..45
3.4  DOS 解釋 Stress 後的現象  ………………………………..46
3.5 HC (hot carrier)與 PBTI (positive-bias temperature instability)
操作機制  ………………………………………………………………47
3.6  非晶矽與微晶矽在 HC、PBTI  stress 物理特性整理  …….48
3.7  非晶矽與微晶矽下閘極薄膜電晶體穩定性結論  ………...50
4  上閘極微晶矽薄膜電晶體電與力可靠度分析  ………………….51
4.1  計畫流程  …………………………………………………...51
4.2  上閘極微晶矽薄膜電晶體製程  …………………………...53
4.3  討論通道長度與玻璃基板取下的電性  …………………..54
5  利用應力模擬討論微晶矽薄膜變晶體在應力的情況  ………….55
5.1  增加無內應力的 SiN  薄層  ………………………………..55
5.2  模擬改變彎曲曲率  ………………………………………..56
5.3  改變微晶矽的內應力  ……………………………………..57
5.4  改變微晶矽的楊氏係數  …………………………………..58
5.5  改變氮化矽的內應力  ……………………………………..59
5.6  改變氮化矽的楊氏系數  …………………………………..60
5.7  整理介面層的應力分佈  …………………………………..62
5.8  改變基板種類(PI、PET、Cu、Steel)的應力分布  ……….63
6  上閘極微晶矽薄膜電晶體機械應力分析  ………………………65
6.1  垂直與帄行通道應力電性分析  …………………………..65
6.2  垂直與帄行通道多次撓曲應力電性分析  ………………..66
6.3  上閘極微晶矽薄膜電晶體張應力多次撓曲電性分析  …...68
6.4  上閘極微晶矽薄膜電晶體壓應力多次撓曲電性分析  …...70
6.5  上閘極微晶矽薄膜電晶體在多次撓曲下可靠度分析  …...72
6.6  模擬多次撓曲下元件劣化機制  …………………………..74
7  上閘極微晶矽電晶體應力下  DC、AC  電流操作可靠度分析  ..77
8  結論  ………………………………………………………………79

第五章、總結與未來工作  ……………………………………………80
1  結論  ……………………………………………………………….80
1.1  異質接面太陽能  …………………………………………...80
1.2  微晶矽薄膜電晶體  ………………………………………...80
2  未來工作  ………………………………………………………….81
2.1  異質接面太陽能  …………………………………………...81
2.2  微晶矽薄膜電晶體  ………………………………………...82
                                

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