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For the development of sub-10nm technology node, the devices with energy conservation an...
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In order to improve CMOS device performance, we expect place more transistors on a single chip, s...
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Fin-type transistor has well gate control capability. This study will investigate photo lithograp...
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In recent years, it has been found that doped HfO2 has ferroelectricity in the orthorhombic phase...
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Ferroelectric Hafnium–based oxide has attracted lots of attention due to the negative capacitance...
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The scaling of transistors has faced a bottleneck, with the advance of science and technology. So...
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The state-of-the-art solar cells have many types, but silicon based type is the mainstream for th...
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The concept of ferroelectric negative capacitance could be a turning point to break through the s...
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In order to develop the 1S1R in cross-point structure, the requirements of the selector are high ...