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研究生： 孫永翔
Yung-Hsiang Sun
論文名稱： 矽奈米線元件應用於有機溶劑氣體感測之研究
Enhanced Sensing property of volatile organic solvents vapor by silicon nanowires device
指導教授： 程金保
Cheng, Chin-Pao
鄭淳護
Cheng, Chun-Hu
學位類別： 碩士
Master
系所名稱： 機電工程學系
Department of Mechatronic Engineering
論文出版年： 2013
畢業學年度： 101
語文別： 中文
論文頁數： 76
中文關鍵詞： 矽奈米線 、有機溶劑 、無電化學蝕刻 、孤對電子 、羰基
英文關鍵詞： silicon nanowires, organic solvents, electroless chemical etching, long pair electron, carbonyl group
論文種類： 學術論文
相關次數： 點閱：118  下載：8 
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    • 本研究利用自發性電化學蝕刻方式在矽基板上製備矽奈米線陣列，透過改變蝕刻時間來製作不同長度的矽奈米線，並將其應用於有機溶劑氣體之感測。實驗結果發現，蝕刻時間增加，矽奈米線長度也會隨之增加。且對於有機溶劑氣體感測之靈敏度，也隨著線長愈長而靈敏度愈好。本研究中並討論有機溶劑氣體分子與矽奈米線表面的反應性，在生活中常見的有機溶劑，本研究選用不具有極性且沒有孤對電子的正戊烷和正己烷，以及具有極性且有兩對孤對電子的甲醇、乙醇和丙酮作為待測有機溶劑。醇類具有由-OH官能基所產生的分子間氫鍵，而丙酮不具氫鍵但含有羰基(C=O)，研究結果顯示矽奈米線對含有羰基之丙酮有最好的反應性及感測靈敏度，而對烷類氣體則感測效果不佳。進一步製作N型與P型矽奈米線比較感測性質差異，結果顯示載子為電子的N型試片在感測過程中電阻值會下降；而載子為電洞的P型試片電阻值則會上升，進一步透過高摻雜之P型與N型試片來做感測並且探討感測機制與提升效果。最後透過Elovich吸附方程式發現在感測初期時圖形呈現線性行為，換算之電流差值越小則代表感測效果越好。

    Herein this study reports the preparation of silicon nanowires by using the electroless chemical etching method. Different lengths of silicon nanowires array can be obtained by changing the etching time. These arrays are used as sensors in detection of volatility organic solvents. We can obtain the longer length of silicon nanowires by increasing the etching time. The sensitivity of organic solvents will be increased depending on the length of silicon nanowires. We choose n-pentane, n-Hexane, methanol, ethanol and acetone as the organic solvents and report the reactivity between that and silicon nanowires. n-Pentane and n-Hexane is an non-polar solvent. There are hydrogen bonds between alcohol molecules causing by the OH functional group and carbonyl group was contained in acetone molecule. Both of these solvents are to be provided with polar. We can obtain the results in good reactivity and sensitivity of acetone which is containing carbonyl group. We compare n-type and p-type sensing result, n-type’s resistance are dropping and p-type’s resistance are rising; To discuss the sensing principle and rising sensing effect via P+ and N+ substrate. On sensing initial stage, we can be obtained by Elovich function to find they are linear, and it means when the current are small, the sensitivity are good.

    第一章 緒論 1 1.1 前言 1 1.2 研究動機與目的 2 第二章 文獻回顧 5 2.1 有機氣體感測儀器原理 5 2.1.1火焰游離式偵測器（Flame Ionization Detector, FID） 5 2.1.2光游離式偵測器（Photo Ionization Detector, PID） 6 2.1.3電子捕集式偵測器（Electron Capture Detector） 6 2.1.4熱傳導式偵測器（Thermal Conductivity Detector） 7 2.1.5觸媒燃燒式感測器（Catalytic Combustion Detector） 7 2.1.6 半導體式感測器（Semi-Conductive Detector） 8 2.2 有機氣體感測器研究近況 10 2.2.1 高分子材料表面電漿氣體感測器 10 2.2.2 多孔矽結構( porous silicon)感測器 13 2.2.3 氧化鋅奈米線 17 2.2.4 矽奈米線 19 2.3 矽奈米線之製備方式 22 2.3.1 氣-液-固成長機制 22 2.3.2 乾蝕刻 24 2.3.3 金屬輔助無電蝕刻 26 2.4 常見有機氣體種類與特性 30 第三章 實驗方法與步驟 33 3.1 實驗流程與規劃 33 3.2 試片準備 34 3.2.1 準備與清洗試片 35 3.2.2 調製蝕刻溶液與蝕刻 35 3.2.3 奈米線表面形貌分析 36 3.2.4 電極製作 36 3.3 感測實驗方法 37 3.3.1 實驗步驟 37 3.3.2 感測參數 38 3.4 使用儀器與設備 41 3.4.1 掃描式電子顯微鏡 41 3.4.2 數位萬用電錶 41 3.4.3 蒸鍍金屬沉積製程 41 第四章 結果與討論 43 4.1 不同時間對矽奈米線形貌的影響 43 4.2 不同種類氣體對矽奈米線的影響 45 4.3 單一線長矽奈米線對不同濃度氣體的感測特性 50 4.4 相同種類之有機溶劑氣體感測性質比較 52 4.5 反覆測試 55 4.6 N型矽奈米線感測 57 4.7 高摻雜試片之感測 59 4.8 反應時間 62 4.9 不理想之因素 64 第五章 結論 65 參考文獻 67

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