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Author: 王咸捷
Thesis Title: 超薄膜鈷/銥(111)的表面結構研究
Advisor: 蔡志申
Degree: 碩士
Master
Department: 物理學系
Department of Physics
Thesis Publication Year: 2016
Academic Year: 104
Language: 中文
Number of pages: 183
Keywords (in Chinese): 超薄膜薄膜磁性薄膜結構銥( (111)歐傑電子能譜低能電子繞射磁光科爾效應
DOI URL: https://doi.org/10.6345/NTNU202204767
Thesis Type: Academic thesis/ dissertation
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  • 在Co/Ir(111)系統中,鈷薄膜在2至6個原子層之間,其平行方向的原子間距d//和垂直膜面上的原子間距d_⊥因應力影響有所變化,導致結構趨於破碎,最終超過8個原子層後產生超順磁的現象。石墨烯插層對於Co/Ir(111)系統影響很大,在鈷薄膜為1.33層以內是量測不到磁滯曲線,當鈷薄膜成長到2.66至3.99個原子層時,鈷薄膜受石墨烯介面影響呈現垂直磁化系統,但與Co/Ir(111)系統最大的不同在於,當鈷薄膜在大於3.99個層之後,未有超順磁現象產生,此時磁異向性由磁晶異向性改為形狀異向性主導,發生自旋取向相變(spin reorientation transition,SRT),磁化的方向從極向轉至縱向。石墨烯插層經熱退火後,上層鈷薄膜會隨著溫度上升而往石墨烯下方移動,移動少量的鈷原子至石墨烯下層後,下層鈷薄膜因與基底銥、石墨烯兩者相互接觸,故磁性初始為極向方向,此時若鈷薄膜層數較大,即石墨烯上層的鈷薄膜厚度尚未低於4個原子層時,會出現交換偏移現象,若是低於4個原子層時,則整體薄膜皆為極向方向。

    摘要 4 第一章 緒論 5 第二章 基本原理介紹 9 2-1 薄膜成長理論 9 2-1-1 薄膜成長模式 9 2-1-2 影響薄膜成長的因素 10 2-2 物理氣相沉積(physical vapor deposition,PVD) 12 2-2-1 蒸鍍(evaporation) 13 2-2-2 分子束磊晶(molecular beam epitaxy,MBE) 14 2-2-3 濺鍍沉積(sputtering deposition) 15 2-2-4 離子束沉積(ion beam deposition) 16 2-3 化學氣相沉積(chemical vapor deposition, CVD) 18 2-3-1 化學氣相沉積的原理 18 2-3-2 化學氣相沉積成長石墨烯 20 2-4 磁性物質 23 2-4-1 磁性物質分類 23 2-5 磁異向性理論 30 2-5-1 磁異向性 30 2-5-2 影響磁異向性的因素 33 2-6 材料介紹 37 2-6-1 石墨烯 37 2-6-2 鈷(cobalt) 40 2-6-3銥(iridium) 40 2-6-4 銥金屬與石墨烯系統 41 第三章 實驗原理與儀器 48 3-1 超高真空系統(ultrahigh vacuum) 48 3-1-1 超高真空定義 48 3-1-2 超高真空系統裝置 51 3-1-3 超高真空的維持 58 3-2 歐傑電子能譜儀(Auger electron spectroscopy,AES) 61 3-2-1歐傑效應與歐傑電子能譜儀 61 3-2-2歐傑電子能譜術的應用 65 3-3 低能量電子繞射儀(low energy electron diffractomerer,LEED ) 71 3-3-1低能量電子繞射儀的基本原理 71 3-3-2 低能量電子繞射儀的內部結構與運作模式 75 3-3-3低能量電子繞射儀的正面亮點分析 77 3-3-4低能量電子繞射的中心量點強度對其入射電子能量分析 78 3-4 表面磁光科爾效應(surface magneto-optic Kerr effect,SMOKE) 83 3-4-1 磁光科爾效應理論 83 3-4-2 磁光科爾效應其量測原理 86 3-4-3 磁光科爾效應儀 89 第四章 實驗結果與討論 91 4-1 Co/Ir(111)研究 92 4-1-1 Co/Ir(111)歐傑電子能譜分析 92 4-1-2 Co/Ir(111)低能電子繞射分析 99 4-1-3 Co/Ir(111)表面磁光科爾效應分析 117 4-2 石墨烯插層對Co/Ir(111)特性影響 125 4-2-1石墨烯的成長 125 4-2-3 石墨烯插層對Co/Ir(111)熱退火影響 139 第五章 討論與結論 170

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