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研究生: 李明承
Ming-Cheng Li
論文名稱: 整合光輔助電化學穿孔蝕刻與微電鑄技術應用於微金屬柱陣列之研製
Fabrication of metal micropillars array by integrating photo-assisted electrochemical etching through-holes and electroforming techniques
指導教授: 程金保
Cheng, Chin-Pao
楊啟榮
Yang, Chii-Rong
學位類別: 碩士
Master
系所名稱: 機電工程學系
Department of Mechatronic Engineering
論文出版年: 2007
畢業學年度: 95
語文別: 中文
論文頁數: 97
中文關鍵詞: 微機電系統電化學蝕刻微電鑄技術
英文關鍵詞: micro electro mechanical system, electrochemical etching, electroforming technology
論文種類: 學術論文
相關次數: 點閱:172下載:0
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  • 本研究將整合光輔助電化學蝕刻(ECE)與精密電鑄技術,以開發高密度金屬垂直結構陣列之製程技術。利用改變光照強度與電流密度等實驗條件,以電化學蝕刻達到矽晶圓高密度微穿孔的目的,再利用精密電鑄技術進行穿孔之金屬導體填充,如此可實現高密度金屬垂直結構陣列。未來可應用於積體化探針陣列之製作,或利用晶圓內垂直導體而實現晶圓級堆疊封裝之目的。此技術開發有設備與製程成本低、可積體化生產、與半導體製程相容性高、批次生產與良率高等特點。
    基於上述,本研究利用自行開發之低成本電化學蝕刻(ECE)設備,順利測得相關製程之最佳參數。由實驗結果已驗證,在利用電化學蝕刻技術製作高深寬比微孔洞陣列方面,當蝕刻時間達到31.5小時,可得高深寬比之結構。所用之晶片為n-type (100),其蝕刻液為2.5 wt.%之氫氟酸溶液,陽極放置矽晶片,陰極為白金,獲得之穿孔其邊長為40 mm,深寬比約為12.5,證明利用此技術已能局部取代乾式蝕刻之應用領域。在金屬柱電鑄方面,利用正負脈衝電流,使金屬柱陣列能順利成形,其金屬柱高度約500 mm,深寬比約為12.5。

    This research will integrate photo-assisted electrochemical etching (ECE) and electroforming techniques for fabricating high-density metal micropillars. This process is described as followed: high-density through holes in silicon are etched by photo-assisted electrochemical etching under various paramerers; then the through holes are fully filled by copper electroforming technique to form high-density metal micropillars. The deveploed technology will be promising for the application of integrated probe array and wafer-level package in the further.
    Because of the above-mentioned, this research used the low-cost electrochemical etching (ECE) equipment developed by ourselves and got the best parameters of the related manufacture. The experiment result proved that the technology had been able to partially replace the dry etching technology. Using the ECE technology to fabricate high aspect of micro-pores array, we can get the structures of high aspect when the etching time reached 31.5 hours. Through-holes were formed by selective partial electropolishing in a 2.5 wt.% HF electrolytic solution, using an N-type, (100)-oriented Si wafer as an anode, and a Pt plate as a cathode. The obtained holes were square through-holes of 40 mm side length, with an aspect ratio of 12.5. Metal micropillars was made by electroforming technology with pulse and reverse current. The height of metal micropillars achieves 500 mm and the aspect ratio cab reach 12.5.

    摘要 I 總目錄 III 圖目錄 V 表目錄 VIII 第一章 緒論 1 1.1 微機電系統簡介 1 1.2 電化學蝕刻技術簡介 4 1.3 類LIGA製程 7 1.3.1類LIGA製程應用 7 1.3.2精密電鑄技術 7 第二章 文獻回顧與理論探討 11 2.1 高深寬比矽基微細加工技術 14 2.1.1濕式矽蝕刻技術 14 2.1.2乾式矽蝕刻技術 16 2.2 多孔矽在電解液中的電流-電壓( I-V )特性 22 2.3 電化學蝕刻之多孔矽成形機制 27 2.4 電沉積的基本原理 38 2.5 電鍍與電鑄技術的異同 43 2.6 微金屬柱陣列可應用之方向 45 2.7 研究動機與目的 47 第三章 實驗方法與規劃 49 3.1 實驗規劃 49 3.1.1 電化學蝕刻之前製程 51 3.2 實驗裝置 55 3.3 實驗與量測設備 57 第四章 實驗結果與討論 66 4.1 光輔助電化學蝕刻製程 66 4.1.1蝕刻電壓的影響 66 4.1.2蝕刻液濃度的影響 72 4.1.3蝕刻時間的影響 76 4.2 電鑄製程 81 4.2.1穿孔之電鑄基板形成方法 81 4.2.2金屬柱陣列之電鑄形成 88 第五章 結論與未來展望 90 5.1 結論 90 5.2 未來展望 91 參考文獻 92

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