本論文是利用斜向磁控濺鍍系統成長銦錫氧化物於具有奈米柱結構的矽基板上。系統地分析及量測斜向濺鍍ITO之形態分佈、穿透反射率以及導電性，進而探討斜向濺鍍薄膜ITO之光吸收特性，並將其薄膜應用在具奈米柱結構的矽基板太陽能電池上。首先製作奈米柱，奈米柱是利用鎳薄膜進行快速熱退火形成奈米鎳球當作蝕刻的遮罩進行乾式蝕刻奈米柱300nm。斜角濺鍍則是以射頻濺鍍系統將ITO薄膜成長在半導體基板上，並以掃瞄式電子顯微鏡觀察其柱狀傾斜角的形態。最後透過光學分析的方式量測折射及反射率。折射率是以橢圓儀量測，反射率則是利用不同波段的雷射光以及白光透過積分球量測取得。本研究成功製作出一傾斜角度為50o，反射率約為10%，折射率為1.7的斜向ITO奈米柱抗反射薄膜。

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