將鑭摻雜於極薄氧化鉿層，以共鍍的方式完成，形成HfO2/HfLaO/p-Si 與HfLaO/HfO2/p-Si結構，再經由快速熱退火製程，在製程溫度850 °C環境下進行退火。
材料分析特性如下，運用X-ray反射技術(XRR)藉由膜層光學干涉現象分析單層厚度。使用X-ray繞射光譜儀(XRD)來分析HfO2與silicate是否產生結晶像，以及分析在不同比例厚度有產生結晶。從HfLaO/HfO2/p-Si結構的介面層有較多的silicate與HfO2/HfLaO/p-Si結構作比較。從nano-AES結論中可得知，當鑭摻雜於上層的HfLaO/HfO2/p-Si結構，有較多的鉿會擴散至Si基板。另一方面HfO2/HfLaO/p-Si結構，有較少的擴散的現象產生，此結構有抑止鉿擴散現象，與HfLaO/HfO2/p-Si結構作比較，此現象可以從XPS與TEM分析儀器驗證。在電性分析方面，分析漏電流、電容值量測，及漏電流機制分析。

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