本文分別以光調制(PR)和壓力調制(PZR)實驗探討在不同溫度下受應力影
響之 砷化鎵／砷化鎵銦 超晶格的電－光性質。兩種實驗機制不同，但
主要的結果一致，彼此相互驗證。實驗的樣品由寬度83A的砷化鎵和寬
度97A的砷化鎵銦，重覆100個週期構成超晶格的結構。系統的量子化能級
與波函數是利用包絡面函數模型，考慮應力效應的哈密爾頓算符，以差分
的方法，得到能量值和波函數。此外，我們也實際計算了躍遷機率，以便
對應正確的躍遷值。在比較擬合譜形所得到的躍遷值後，可以發現，在價
帶能量落差(Qv)等於0.3時，較能符合實驗的結果，此時輕電洞展示能帶
第二型( Type II)的排列方式。另一方面，由對應的結構也可以看出超晶
格中井與井的耦合效應。

We have measured the photoreflectance (PR) and the pizeo-
reflectance (PZR) spectra to study the electro-optical
properties of the strained-layer GaAs/InGaAs superlattice.
Despite the difference between these two experimental
mechanisms, the main results are consistent. The sample is
composed of 100 periods of GaAs(83A) / InGaAs(97A)
superlattice. The Hamiltonian of the superlattice system was
constructed by a four-band k‧p model including the strain
effect. The quantized energy levels and the wave functions of
the Ha- miltonian were solved numerically by the difference
method. Besides, the transition probabilities between the
electron levels and hole levels were also calculated and
compared with the corresponding spectral structures. By fitting
the experimental line shape, good agreement is found for a va-
lence band offset (Qv) of 0.3. The light hole state presents a
type-II configuration. Furthermore, the coupling effects
between wells in the superlattice were also observed in the
experimental spectra.
We have measured the photoreflectance (PR) and the pizeo-