由VLS (氣、液、固三相)所製程的氮化鎵奈米線中，n型氮化鎵的電漿為雜質所造成。縱波光學LO(longtidinal optical)聲子與電漿之耦合現象以拉曼光譜之方法測得，對於介於LO、橫波光學TO(transverse optical)聲子間的譜線可以被解釋為較大電漿阻尼下，LO聲子和電漿的耦合效應所造成的結果，並可由CDF(Charge Density Fluctuations)，IIF(Impurity-Induced Fröhlich)兩種機制說明，電漿的介電係數則採用Lindhard-Mermin 的表示式。由程式模擬拉曼散射光譜和實驗結果比對發現，兩種機制都可同時存在並有不同的比例，此比例和入射光能量有關並可由程式擬合，程式擬合發現氮化鎵電漿濃度約在1019 cm-3數量級，阻尼常數約在 200 cm-1 以上，並推測靠近 LO 的峰值由IIF 機制所造成的效果，而非確實LO 聲子的位置，且隨入射光光子能量增加，使得譜線中IIF 效應增強而有偏移現象，並在接近能帶之入射光光子能量，IIF所造成之聲子峰接近LO 聲子的位置。

The GaN nanowires grown by the vapor-liquid-solid mechanism were studied by Raman scattering. The free electron gas was due to n-type impurities introduced during the growth. The Raman spectra clearly show the coupling of LO phonon and plasmon. The coupling between LO-phonon and plasma can be well explained by CDF (charge-density fluctuation mechanism) and by IIF (impurity-induced Frühlich mechanism). An overdamped plasma model, along with the Lindhard-Mermin dielectric function, was used to calculate the coupling of LO phonon and plasmon. We found it matched with measured Raman spectra, and impurity concentration can be deduced . Plasmon damping constant was over 200 cm-1 and concentration was about 1019 cm-3. The phonon-like peak was deduced by IIF mechanism and shifted when laser energy relatively close to fundamental band gap of GaN.

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