摘要
我們利用電場調制反射光譜(ER)來研究由MBE長成的矽鍺合金和矽鍺多重量子井樣品。實驗結果發現在低溫矽上成長的矽鍺合金有一躍遷能量約820meV的躍遷訊號，並將此一躍遷能帶稱為alloy-band
。此外，隨著樣品中低溫矽的磊晶溫度增加，電場調制效率有明顯增加的趨勢。
矽鍺多重量子井樣品由於應力對能帶結構的影響，實驗結果觀察到應力作用後的躍遷能量，我們並利用K-P模型推算出量子井的躍遷能量，計算所得到的躍遷能量符合調制光譜的實驗結果。

ABSTRACT
We have investigated the Si1-xGex alloy and Si/Ge multiple quantum wells grown by Solid Source Molecular Beam Epitaxy (MBE) using electroreflectance (ER) at various temperatures. The ER spectral features with photon energy about 820meV correspond to the transition involving the alloy- band of the ioselectronic centers in the Si1-xGex alloys. The efficiency of ER modulation is enhanced with increasing growth temperature of the low temperature-Si.
We have also studied all the principal optical transitions in strained Si/Ge multiple quantum well structures. The quantum wells confined energy levels were calculated by K-P model. The transitions involving the quantum states are compared with observed spectral features.

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