本論文是結合兩種，分別是Nd:Yag雷射退火和DLTS((Deep-Level Transient Spectroscopy)的系統架構。
Nd:Yag雷射可用於多方面，本論文是先討論雷射系統架構的方式，結合許多機台將其連結成系統後，之後在探討調整不同的雷射能量，所造成的退火效果，由於雷射能量高，發射速度快，再利用移動平台可以精準的控制想要退火的區域，有別於其他退火方式的不同，傳統退火需要整體上的退火，例如爐管，無法控制想要退火的區域，因此如何將雷射退火系統架構起來，是本論文的重點之一。
除此之外，本論文另外一個重點是利用DLTS的技術，可以應用於半導體的技術檢測，利用電子對電壓的反應來判斷元件是否優劣。本論文就以需要的量測需求，針對儀器的極限和能力將其可以運作成量測的系統，同樣也是將許多機台組合成一系統，使其發揮機台本身的價值，也是本論文的重點之一。
之後未來的目標，是希望可以將這兩種系統，能夠結合在一起，利用雷射系統來退火針對薄膜電晶體(TFT)，或是使用雷射結晶，之後連結DLTS的量測方式，用來檢視薄膜電晶體的內部缺陷，對於元件內的可以分析以及討論。

This paper is a combination of two kinds system, Nd: Yag laser annealing and DLTS ((Deep-Level Transient Spectroscopy) system.
Nd: Yag laser can be used in many ways, this paper is discuss the way the laser system architecture, combined with a lot of machines to link into the system.Adjustment with different laser energy,we can know about annealing effect.Due high laser energy , emission speed fast, and then use the move stage can precisely control the annealing regions.Unlike other annealing different ways, the traditional annealing is annealing on the whole region, such as the furnace tube, we can not control the area or region which we want to annealing, the laser annealing system is the focus of this paper.
In addition, another focus of this paper is the use of DLTS technique can be applied to the detection of semiconductor technology, the use of the electronic response of the voltage component to determine whether good or bad. The research is based on the measurement is also to be combined into other machine system for instrument limits.How to combined the machine is also the focus of this paper one.
After future goal is to be able to these two systems can be combined using laser annealing system for thin film transistor (TFT),or use the laser crystallization.In addition to link DLTS measurements way,discuss the TFT internal defects , we can know the TFT can be analyzed and discussed.

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