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研究生：	洪詩婷 Hung, Shih-Ting
論文名稱：	製備高發光效率InP/ZnS核殼層量子點與研究其發光二極體的應用 Fabrication of High Luminous Efficacy InP/ZnS Core-Shell Quantum dots for Application to Light-Emitting Diodes
指導教授：	陳家俊 Chen, Chia-Chun
學位類別：	碩士 Master
系所名稱：	化學系 Department of Chemistry
論文出版年：	2016
畢業學年度：	104
語文別：	中文
論文頁數：	65
中文關鍵詞：	半導體量子點、環境無害的磷化銦量子點
英文關鍵詞：	Semiconductor quantum dots, environment-friendly InP quantum dot
DOI URL：	https://doi.org/10.6345/NTNU202203708
論文種類：	學術論文
相關次數：	點閱：146 下載：0
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奈米等級尺寸之半導體量子點能階可隨粒徑大小與成分組成改變，其具有獨特之光學特性。然而過去以鎘(Cd)為主之量子點具有毒性，使其發展受到限制，尋找替代的物質是非常重要的研究。在所有可能的替代物質中，以磷化銦(InP)在光電特性的表現上最具希望，並在近年來的研究中慢慢地應用。在本篇論文中，首先我們將介紹對環境友善的磷化銦(InP)量子點的合成，我們將使用傳統的高溫注射法和無毒的前驅物P(TMS)3來進行合成，經由硫化鋅(ZnS)包覆在外層形成核殼層結構來提高磷化銦(InP)量子點的持久性，在過程中，我們會控制不同的成長溫度和前驅物的濃度來合成一系列的磷化銦(InP)量子點。磷化銦(InP)量子點發光二極體應用於照明為良好之光轉換發光材料，在論文中也會測試其耐熱性和成膜性。在耐熱性的部分我們將使用不同的溫度和時間來測試磷化銦(InP)量子點在發光二極體元件中適合的溫度，另外我們也會添加脂肪酸來增加磷化銦(InP)量子點在固態發光元件的成膜性。

Semiconductor quantum dots (QDs), of which particle sizes are in the nanometer scale, have very unusual size-controllable optical properties.
However, the well-developed Cadmium-based QDs are restricted in further application due to its acute toxicity, making it necessary to find the alternative materials. Among all the possible alternatives, indium phosphide(InP) shows promising in both optical and electric properties, which can be later introduced into application.
The environment-friendly InP quantum dots (QDs) have been synthesized in this paper by the conventional hot injection method using a non-toxic precursor of P(TMS)3. To enhance the material durability, the InP would be covered by ZnS, forming the InP/ZnS core-shell structure. The carefully controlled syntheses of a series of InP/ZnS QDs were designed by varying the core-growth temperature and the concentrations of precursor.
The environment-friendly InP/ZnS is set to have further application in electronic devices. Therefore, heat resistance and surface smoothness were also examined in our work. In the test of heat resistant, InP/ZnS quantum dots were annealed under different temperature and time, which shows possible to the light-emitting diodes (LEDs) converters. Over all, using fatty-acid as the surfactant, the InP/ZnS QDs have revealed the potential for the fabrication of solid-state lighting.

謝誌    I
Abstract    II
中文摘要    III
總目錄    IV
圖目錄    VII
第一章    緒論    1
1-1     前言    1
1-2量子點介紹    2
1-2-1量子點特性    2
1-2-1-1表面效應    2
1-2-1-2 小尺寸效應    3
1-2-1-3量子效應    4
1-2-2量子點的生長理論    5
1-2-3 量子點的結構    6
1-2-3-1 核心結構(core structure)    6
1-2-3-2 量子點表面有機物    10
1-2-3-3核殼層半導體量子點    11
1-2-3-4Ⅱ-Ⅵ族,Ⅲ-Ⅴ族和Ⅰ-Ⅲ-Ⅵ族半導體量子點介紹    13
1-2-3-4-1Ⅱ-Ⅵ族量子點    13
1-2-3-4-2Ⅲ-Ⅴ族量子點    14
1-2-3-4-3Ⅰ-Ⅲ-Ⅵ族量子點    16
1-2-4 量子點的量子產率(Quantum Yield)    18
1-3量子點的應用    20
1-3-1量子點應用在發光二極體的波長轉換器    20
1-3-2電激發光元件應用    23
1-3-2-1可調控放射波長    24
1-3-2-2飽和的顏色    25
1-3-2-3穩定度    26
1-3-2-4液體成膜    26
1-3-3量子點在太陽能染料敏化電池的應用    28
1-3-4生物顯影應用    29
第二章 實驗設備與流程    31
2-1實驗設備    31
2-1-1螢光光譜儀(Photoluminescence,PL)    31
2-1-2可見光/紫外光/分光光譜儀(UV/Vis Spectrophotometer)    32
2-1-3穿透式電子顯微鏡(Transmission Electron Microscopy,TEM)    33
2-1-4掃描式電子顯微鏡(Scanning Electron Microscope,SEM)    35
2-1-5 X繞射(X-ray Diffraction,XRD)    36
2-1-6旋轉塗佈機(Spin coater)    37
2-2合成步驟    39
2-2-1藥品    39
2-2-2實驗流程    39
2-2-3實驗步驟    40
2-2-3-1磷前驅物準備    40
2-2-3-2疏水性 InP 量子點的合成    41
2-2-3-2疏水性核殼層InP/ZnS量子點的合成    42
2-2-3-3疏水性InP/ZnS量子點的純化    43
2-3實驗動機與目的    45
第三章結果與討論    46
3-1實驗目標    46
3-2材料特性之分析    47
3-2-1疏水性磷化铟/硫化鋅核殼層量子點的吸收與螢光光譜    47
3-2-2具可調控波長之疏水性磷化铟/硫化鋅核殼層量子點    48
3-2-3疏水性磷化铟/硫化鋅核殼層量子點性質探討    50
3-2-3疏水性磷化铟/硫化鋅核殼層量子點的耐熱性    53
3-3 InP/ZnS QDs作為發光二極體發光層的探討    55
3-3-1InP/ZnS QDs應用在發光二極體發光層的製作    55
3-3-2發光二極體發光層發光測試    59
未來展望    61
參考文獻    62
                                

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