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研究生： 羅嘉佑
Jia-You Lo
論文名稱： 晶圓穿孔陣列之光輔助電化學蝕刻特性研究
Silicon wafer through-holes fabricated by photo-assisted electrochemical etching
指導教授： 楊啓榮
Yang, Chii-Rong
學位類別： 碩士
Master
系所名稱： 機電工程學系
Department of Mechatronic Engineering
論文出版年： 2008
畢業學年度： 96
語文別： 中文
論文頁數： 174
中文關鍵詞： 微機電系統 、光輔助電化學蝕刻 、微穿孔陣列 、抗反射結構
英文關鍵詞： MEMS, photo-assisted electrochemical etching, mocri through-holes array, antireflective structure
論文種類： 學術論文
相關次數： 點閱：211  下載：13 
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  •  上一筆

    • 本研究自行開發低光源成本之光輔助電化學蝕刻(photo-assisted electrochemical etching, PAECE)設備，藉由改變光照強度及界面活性劑等實驗條件，並改善電化學蝕刻穿孔製程，得到較高之蝕刻速率與低孔壁粗糙度的穿洞陣列。未來可應用於積體化微探針陣列之製作，或利用晶圓內垂直導體之晶圓內連線而實現晶圓級堆疊封裝之目的。此技術開發有設備與製程成本低、可批次生產、良率高，且與半導體製程相容性高等特點。
    由實驗結果已驗證，在利用光輔助電化學蝕刻技術製作高深寬比微穿孔陣列方面，可得到500 um的孔洞深度、穿孔時間最快約為16.7 hr的微穿孔陣列，且孔壁形貌有極佳之表面粗糙度。電化學蝕刻之孔徑最小約為21 um，蝕刻孔洞之深寬比最大約為17.7。相關之實驗條件如下：光源照度為32000 lux至18000 lux，選用陽離子型界面活性劑1 wt.% DC-1、陰離子型界面活性劑1 wt.% MA、強氧化劑2.5 wt.% H2O2及有機界面活性劑1 wt.% Alcohol。經此技術蝕刻而得之黑色微孔洞陣列，在僅添加陰離子型界面活性劑1 wt.% MA且蝕刻2 hr後，其反射率最低可降至約0.43%，而使用界面活性劑蝕刻穿孔之結構亦能有約0.4-0.5%之反射率。
    本研究證明了利用此技術已能局部取代乾式蝕刻之應用領域，並對於積體化微探針陣列之製作，或晶圓內連線之晶圓級堆疊封裝有極大的助益。且經此技術所製成之黑色微孔洞陣列結構，將有機會應用於太陽能電池之抗反射層，大幅提升太陽能電池之轉換效率。

    This research developed photo-assisted electrochemical etching (PAECE) system with low-cost light source for fabricating high-density silicon wafer through-holes array. This process is described as followed: high-density through-holes array in silicon is etched by photo-assisted electrochemical etching under various parameters, such as illumination, surfactants, and concentrations, then to improve the through-hole etching fabrication to obtain through-holes array with high etching rate and smooth etching sidewall. The developed technology will be promising for applications of integrated probe array and wafer-level package in the further. Its advantages are described as followed: low-cost system and fabrication, manufacture, high yield, and suitable for semiconductor process.
    Using PAECE technology to fabricate wafer through-holes array, we can get the structures with high etching rate and smooth etching sidewall through silicon substrate with thickness of 500 um when the etching time reached 16.7 hours. The smallest width of through-hole by PAECE is 21 um, and the highest aspect ratio is 17.7. The related experimental parameters are described as followed: illumination is 18000-32000 lux, chose surfactants are 1 wt.% DC-1, 1 wt.% MA, 2.5 wt.% H2O2 and 1 wt.% Alcohol. The black micro holes array fabricated by PAECE 2 hr with 1 wt.% MA has ultra-low reflectivity 0.43%, and reflectivity of through-holes array also has equal values about 0.4-05%.
    Results of this research proved that PAECE technology had been able to partially replace the dry etching technology. It has advantages for applications of integrated probe array and interconnection of wafer-level package. After PAECE fabrication, the black micro holes array will be applied to antireflective structure of solar cell to improve the efficiency obviously.

    摘要...............................I 總目錄...............................III 圖目錄...............................VI 表目錄...............................XIII 第一章 緒論...............................1 1.1 微機電系統簡介...............................2 1.2 電化學蝕刻技術簡介...............................5 1.3 太陽能電池之抗反射層...............................8 1.4 論文架構...............................9 第二章 文獻回顧與理論探討...............................10 2.1 高深寬比矽基微細加工技術...............................14 2.1.1濕式矽蝕刻技術...............................14 2.1.2乾式矽蝕刻技術...............................17 2.2 多孔矽在電解液中的電流-電壓( I-V )特性...............................23 2.3 電化學蝕刻之多孔矽成形機制...............................28 2.4 電化學掏空機制...............................40 2.5 太陽能電池抗反射層之表面粗化技術...............................42 2.6 微穿孔陣列可應用之方向...............................52 2.7 研究動機與目的...............................56 第三章 實驗方法與規劃...............................58 3.1 實驗規劃...............................58 3.1.1 電化學蝕刻之前製程...............................59 3.2 實驗裝置...............................64 3.3 實驗與量測設備...............................66 第四章 實驗結果與討論...............................77 4.1 光源照度對蝕刻深度及孔壁形貌的影響...............................77 4.2 不同界面活性劑與濃度對蝕刻深度及孔壁形貌的影響...............................84 4.2.1 陽離子型界面活性劑DC-1與DC-2之實驗結果...............................85 4.2.2 非離子型界面活性劑BR-1、BR-2與Triton-X之實驗結果...............................91 4.2.3 陰離子型界面活性劑MA、強氧化劑H2O2及有機界面活性劑Alcohol之實驗結果...............................99 4.3 兩劑混合型界面活性劑對蝕刻深度及孔壁形貌的影響...............................111 4.3.1 陽離子型界面活性劑DC-1與陰離子型界面活性劑MA之實驗結果...............................111 4.3.2 陽離子型界面活性劑DC-1與強氧化劑H2O2之實驗結果...............................115 4.3.3 陽離子型界面活性劑DC-1與有機界面活性劑Alcohol之實驗結果...............................118 4.3.4 陰離子型界面活性劑M A與強氧化劑H2O2之實驗結果...............................121 4.3.5 強氧化劑H2O2與有機界面活性劑Alcohol之實驗結果...............................124 4.3.6 陰離子型界面活性劑MA與有機界面活性劑Alcohol之實驗結果...............................127 4.4 光輔助電化學穿孔蝕刻與其形貌改善...............................130 4.4.1 一階段之光輔助電化學穿孔蝕刻...............................130 4.2.2 兩階段之光輔助電化學穿孔蝕刻...............................136 4.5 電化學蝕刻結構之反射率量測...............................145 4.6 研究結果與文獻之比較...............................157 第五章 結論...............................163 第六章 未來展望...............................165 參考文獻...............................167

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