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研究生: 徐尉庸
Hsu, Wei-Yung
論文名稱: 利用鈣鈦礦結構薄膜對連續體束縛態之太赫茲光電調變研究
Investigation of terahertz electro-optic modulations of bound states in the continuum utilizing perovskite structured thin films
指導教授: 楊承山
Yang, Chan-Shan
口試委員: 楊承山
Yang, Chan-Shan
鄭璧如
Cheng, Pi-Ju
李仰淳
Lee, Yang-Chun
口試日期: 2024/07/24
學位類別: 碩士
Master
系所名稱: 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2024
畢業學年度: 112
語文別: 中文
論文頁數: 100
中文關鍵詞: 調制器太赫茲全介電超表面連續體束縛態鈣鈦礦甲基銨基碘化鉛薄膜鈮酸鋰薄膜
英文關鍵詞: terahert, modulator, all-dielectric metasurface, bound states in the continuum, perovskite, methylammonium lead iodide thin film, lithium niobate thin film
研究方法: 實驗設計法
DOI URL: http://doi.org/10.6345/NTNU202401623
論文種類: 學術論文
相關次數: 點閱:110下載:0
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  • 致謝 i 摘要 ii Abstract iii 目錄 iv 表目錄 vi 圖目錄 vii 第一章、 緒論 1 1.1 前言 1 1.2 文獻回顧 3 1.2.1 太赫茲 3 1.2.2 超材料 5 1.2.3 連續體束縛態 7 1.2.4 連續體束縛態調制器 11 1.2.5 光子晶體 14 1.2.6 甲基銨基碘化鉛 16 1.2.7 鈮酸鋰 18 1.3 研究動機 20 1.4 論文架構 22 第二章、 理論原理與模擬 23 2.1 表面電漿子特性 23 2.2 有限元素分析法 29 2.3 品質因子 30 2.4 連續體束縛態 31 2.5 甲基胺基碘化鉛光電特性 34 2.6 鈮酸鋰電光特性 39 第三章、 數值模擬結果分析與討論 44 3.1 MAPbI3 薄膜電導率與介電常數計算 44 3.2 LiNbO3 薄膜折射率與消光係數以及介電常數計算 47 3.3 結合 MAPbI3 薄膜的 BIC 調制器結構設計 51 3.4 優化結合 MAPbI3 薄膜的 BIC 調制器結構設計 55 3.4.1 Si/PMMA/ MAPbI3 共振腔 55 3.4.2 改變 Si/PMMA/ MAPbI3 共振腔尺寸 58 3.4.3 MAPbI3 薄膜電導率對品質因子的影響 60 3.5 不同功率的外加光泵浦對共振腔的影響 65 3.6 結合 MAPbI3 與 LiNbO3 薄膜 BIC 調制器結構設計 75 3.6.1 Si/PMMA/MAPbI3/ PMMA/ LiNbO3 共振腔 77 3.6.2 LiNbO3/PMMA/ Si/PMMA/MAPbI3 共振腔 79 3.7 不同伏特的外加偏壓對共振腔的影響 84 第四章、 結論與未來展望 87 4.1 結論 87 4.2 未來展望 89 參考文獻 92

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