現代電子產品逐漸朝向輕薄短小及多功能整合發展，產品比例縮小同時仍需達到良好性能，故必須增加產品元件之密度。可以想像在相同面積的情況下，元件數量卻成比例增加，將帶來更多熱功率，使得元件處於高溫狀態中，降低元件使用壽命。因此，冷卻成為不可忽視的課題。微型熱電致冷元件具有體積小、無汙染、控溫精確等優點，符合目前產業趨勢。然而，傳統熱電致冷元件之製造方式，製程繁雜且生產成本高昂。若應用網版印刷技術製作高性能微型熱電致冷元件，除了可降低生產成本與時間之外，亦能簡化製程，有利於產業應用之普及化。
本研究主要分為二大項目：(1) 以網版印刷技術製備熱電結構，對其席貝克係數、電阻率與熱傳導值進行特性評估；(2) 應用網版印刷技術，透過雙陶瓷基板的方式，並結合覆晶粒接合技術進行熱電致冷元件之製作。實驗結果顯示，n型材料Bi2Te3，其席貝克係數、電阻率與熱傳導值分別為-151.81 V/K、1.03  10-3 m和0.35 W/mK。在環境溫度為300 K之情況下，熱電優值可達0.0191。p型材料Sb2Te3，其席貝克係數、電阻率與熱傳導值分別為125.55 V/K、1.47  10-3 m和0.25 W/mK。在環境溫度為300 K之情況下，熱電優值可達0.0128。最後，將已知熱電特性之熱電材料，藉由網版印刷技術與覆晶接合技術，成功研製出40對熱電偶串接而成之三維熱電微型致冷元件。元件主要結構分為上、下電極基板及中間之熱電結構層，三層結構經精密對準後堆疊而成，其電極為尺寸100 m之方形陣列，電極厚度約為10 m，熱電結構則印製15 m左右之厚度。目前熱電致冷元件的製作，尚待進一步的製程改良，以提升其製程良率與性能品質，期望能在最短的時間內，完成元件的製作與效能測試。

Nowadays, it is a trend that electronic products have become smaller and more functional. While we minimize our products, there are more devices which would be integrated into a limited area. As long as the number of devices has increased, it would create more heat which might damage the devices. To overcome this problem, we should put emphasis on cooling. Thermoelectric cooling microdevice has some advantages which meet current needs such as small volume, pollution-free and precise temperature control. Due to the fabrication processes of traditional thermoelectric, cooling microdevice is complicated and high cost. If we could fabricate high performance thermoelectric cooling microdevice through screen-printing technique, the fabrication process would be simplified. It can reduce the time and cost of production, and also benefit the popularization of industrial application.
This research has two points as followed: (1) Using screen-printing technology to fabricate thermoelectric materials, and to measure Seebeck coefficient, electric conductivity, and thermal conductivity. (2) Using screen-printing technology to experiment and discuss the process of thermoelectric component fabricated by two-ceramics method. The Seebeck coefficient (), electrical resistivity () and thermal conductivity () are -151.81 V/K, 1.03  10-3 m, 0.35 W/mK and the ZT value of Bi2Te3 is 0.0191 at 300 K. The ,  and  are 125.55 V/K, 1.47  10-3 m, 0.25 W/mK and the ZT value of p-type Sb2Te3 is 0.0128 at 300 K. Finally, through screen-printing and flip-chip bonding technique, 3D thermoelectric cooling microdevice of 40 series pairs thermocouple were successfully made from thermoelectric material which we already knew of the properties. The structures of device mainly separated into upper electrode, thermoelectric structure, and bottom electrode. Those structures were stacked precisely. The electrode were square array with the size of 100 m, and the thickness 10 m. The thickness of thermoelectric structure were about 15 m. Currently, in order to elevate the yield rate and performance quality, the fabrication of thermoelectric cooling devices were expected to be improved. We hoped that we can accomplish the fabrication of devices and testing as soon as possible.

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