研究生: |
張峻賢 Chun-Hsin Chang |
---|---|
論文名稱: |
L10-FePt奈米線陣列之垂直磁性自旋閥 Perpendicular magnetic L10-FePt -based nanowires arrays spin valves |
指導教授: |
胡淑芬
Hu, Shu-Fen |
學位類別: |
碩士 Master |
系所名稱: |
物理學系 Department of Physics |
論文出版年: | 2011 |
畢業學年度: | 99 |
語文別: | 中文 |
論文頁數: | 96 |
中文關鍵詞: | 奈米線 、陽極氧化鋁 、自旋閥 |
英文關鍵詞: | nanowires, anodized aluminum oxide, spin valve |
論文種類: | 學術論文 |
相關次數: | 點閱:163 下載:1 |
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本研究利用孔洞為50 nm之陽極氧化鋁(AAO)作為模板,再以電化學沉積之方式合成出FePt奈米線陣列。藉由X光繞射儀(XRD)觀察FePt奈米線陣列於700oC與5% H2/N2之環境下進行熱退火時FePt奈米線陣列將從無序相之面心立方晶格fcc轉換為有序L10相,FePt奈米線陣列於有序相L10相其矯頑磁場約為7.5 kOe,利用熱退火之方式,使L10相FePt奈米線陣列至(001)方向之磁化易軸。而L10相FePt奈米線陣列之矯頑磁場遠大於Ni3Fe,故FePt/Cu/Ni3Fe奈米線陣列中之FePt固定層與Ni3Fe自由層之磁性差異性,即形成具功能性之開關元件。藉由此性質合成FePt/Cu/Ni3Fe與FePt/NiO/Ni3Fe多層結構之奈米線,即可觀察巨磁阻(GMR)之現象與垂直式磁性自旋閥效應,而多層L10-FePt奈米線陣列其特性可被應用於一維磁性奈米材料。
FePt nanowires arrays were successfully prepared by electrodeposition into porous anodized aluminum oxide (AAO) templates with pore diameters of approximately 50 nm from a very simple electrolyte. The phase transition of FePt nanowire was from a disorder alloy distribution of fcc to ordered L10 phase after annealing at 700oC in 5% H2/N2, and it was observed by x-ray diffraction approach. FePt nanowires with L10 phase exhibit a large coercivity of 7.5 kOe. Thermal treatment was applied to obtain L10-FePt nanowires with (001) preferential orientation. The coercivity of L10- FePt nanowires is greater than that of Ni3Fe, therefore FePt/Cu/Ni3Fe nanowires exhibited a well-separated switching of the FePt fixed layer and the Ni3Fe free layer. This characteristic can be used to fabricate multi-segment of FePt/Cu/Ni3Fe and FePt/NiO/Ni3Fe nanowires which also can observed the giant magnetoresistance (GMR) and perpendicular magnetic spin valve effect. multi-segment of L10-FePt nanowires prepared by the present process have great potential for one dimension nanomagnetism application.
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