研究生: |
洪榮吉 xs, s |
---|---|
論文名稱: |
(一):氮,氮'-雙氰基恩菎二亞胺與四硫富瓦烯錯合物性質的初步探討. Fundamental Characterizations of DCNAQI-TTF complexes. |
指導教授: |
劉高家秀
Liu Gao, Jia-Xiu |
學位類別: |
碩士 Master |
系所名稱: |
化學系 Department of Chemistry |
畢業學年度: | 84 |
語文別: | 中文 |
論文頁數: | 1 |
中文關鍵詞: | 氮,氮'-雙氰基恩菎二亞胺 、四硫富瓦烯 、電荷轉移型錯合物 、薄膜電極 、等效電路 、導電玻璃 |
英文關鍵詞: | DCNAQI-TTF, (DCNAQI)Cu/ITO, Charge-Transfer complex, thin-filmed electrode, equivalent circuit, ITO |
論文種類: | 學術論文 |
相關次數: | 點閱:156 下載:0 |
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氮,氮'-雙氰基恩菎二亞月安(N,N '- Dicyanoanthraquinone
Diimine;DCNAQI)可與四硫富瓦烯(Tetrathiafulvalene;TTF)或銅等電
子供給者,形成電荷轉移型錯合物(Charge-Transfer complex)。本論文
發現DCNAQI-TTF可具有二種不同比例之錯合物,其活化能介於0.04~0.6
eV,導電度相差達108倍,於是針對其生成條件,晶體製備,錯合物結構
及其它基本物理特性進行一系列研究探討,並利用其半導體特性,將其發
展為一光閥及氫氣感測器,由於DCNAQI-TTF錯合物之光導電度不受氧氣干
擾,且其對氫氣之感應度較(DCNAQI)Cu鹽大十倍,因此其性質較(DCNAQI)
Cu鹽更為優良。 此外本論文亦對(
DCNAQI)Cu/ITO薄膜電極之製備加以改善,以得到穩固之薄膜電極,並對
其表面結構以及〝半導體/電解質界面 〞之等效電路(Equivalent
Circuit)等基本物理特性進行一系列研究探討,實驗結果發現,(DCNAQI)
Cu只在0 ~ - 0.5 V vs SCE之電位範圍方為穩定,此時(DCNAQI)/Cu薄膜
為一N型半導體,在此電位範圍之外,電位太正則(DCNAQI)Cu薄膜氧化剝
離,電位太負則(DCNAQI)/Cu薄膜還原變質為一P型半導體,這個結果澄清
了較早的疑慮,(DCNAQI)Cu薄膜為在銅基質上為一P型半導體,而在ITO基
質上卻為一N型半導體。
DCNAQI reacted with electron donors such as TTF or copper to
form charge -transfer complex. We have found that DCNAQI-TTF
formed two different ratios of complexes and the activiation
energies are between 0.04~0.6 eV. The different conductance of
these two complexes is 108 times. The studies of the formation
conditions, crystal structure,and their physical properties lead
us to develop the photo valve sensorandetector. The properties
of the DCNAQI-TTF complexes are better than (DCNAQI)Cu salt
because the photo conductanc of the former is unaffected by the
oxygen gas and the sensitivity to hydrogen is ten fold
betterthan the latter. We also have succeed
to improve the properties of in the thin-flimed electrodeto
obtain stable electrode. The studies of the surface structure
and theequivalent circuit of the " semiconductor / electrode
surface " help us tounderstand the (DCNAQI)Cu is stable between
0 and - 0.5 V vs SCE. Under thiscondition, the electrode behaves
like n -type semicondctor. In the more positivepotentials, the
(DCNAQI)Cu film will be anodicallypolarized. On the other hand,
the film will be reduced to p - type semiconductor if the
potential shifts to more negative values. This result help us to
understand why (DCNAQI)Cu film behave as a p - type
semiconductor on copper substrate and as a n - type on ITO
conducting glass.
DCNAQI reacted with electron donors such as TTF or copper to