國立臺灣師範大學博碩士論文全文系統

簡易檢索 / 詳目顯示

回結果列表

研究生：	王曉雯
論文名稱：	磊晶氮化鎵奈米線在藍寶石晶圓之製備及光電性質 Fabrication and photoelectrical properties of epi-GaN nanowires on sapphire
指導教授：	陳家俊 Chen, Chia-Chun 陳貴賢 Chen, Kuei-Hsien 林麗瓊 Lin, Li-Chyong
學位類別：	碩士 Master
系所名稱：	化學系 Department of Chemistry
論文出版年：	2005
畢業學年度：	93
語文別：	英文
論文頁數：	54
論文種類：	學術論文
相關次數：	點閱：203 下載：1
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

奈米線奈米管等一維奈米材料，因為在化學及物理上新穎且有趣的特
性而受到廣大的重視，一維半導體結構也被視為作為奈米尺寸電及光電
元件最普遍的材料。然而，處理這些奈米材料的電性接點相當不易，侷
限了其應用。我們製備了一個新型的金屬-半導體-金屬(M-S-M)的紫外光
偵測器，用磊晶氮化鎵奈米線作為光導材料。氮化鎵薄膜層用標準的微
影蝕刻技術以及反應性離子蝕刻技術來製造出溝槽寬10微米的M-S-M結
構。催化成長出連接兩端氮化鎵塊材的磊晶氮化鎵奈米線，其平均直徑
50±5 奈米，長度10±2 奈米。光導量測顯示出氮化鎵奈米線在3.4eV有
個內價帶躍遷的單一吸收。而且此紫外光偵測器量測出最大的反應度可
達到4×104 A/W，這個值遠遠大於已知的氮化鎵薄膜紫外光偵測器兩個
數量級以上。這樣高的光反應性或許來自於一維材料中較少的晶格散射
以及較高的載子遷移率。

One-dimensional (1D) nanostructures, such as NWs, NTs, have
attracted much attention due to their novel and interesting properties in
physics and chemistry. One-dimensional semiconducting structures have been
served as the next generation materials to achieve the goal of nano-scaled
electronic and optoelectronic devices. However, the difficulties in dealing
with the electrical contacts on these nanosized materials have been limiting
the potential applications of 1D nanostructures. In this work, we present the
fabrication of a new ultra-violet (UV) detector with
metal-semiconductor-metal (M-S-M) structure using epitaxially grown GaN
nanowires (NWs) as the photoconducting materials. The GaN layer on the
M-S-M structure was patterned in patches with 10 µm gaps by standard
photolithography and reactive ion etching process. The catalyst-grown GaN
NWs have average diameters of 50±5 nm and lengths of 10±2 µm and link
the two side walls of the GaN block electrodes. Photoconductivity (PC)
spectra show that the GaN NWs exhibit a single absorption at 3.4 eV which is
attributed to the inter-band transition. The maximal responsivity of the GaN
NWs UV-detector is around 4×104 A/W which is higher than the reported
values for GaN films by two orders of magnitude. The origin of this high
responsivity of the GaN NWs could be attributed to low lattice scattering and
high carrier mobility in this low-dimensional material.

Chapter 1. Introduction……………………………………………………1
1 .Introduction of Nanotechnology..............................................1
2 .III-Nitride Semiconductor....................................................................2
2.1 Optoelectronic properties and atomic structures………………..…….2
2.2 Structural and chemical properties of Galium Nitride……………..…4
3 . Vapor-Liquid-Solid (VLS) mechanism to grow nanowires………..………7
4 . Photoconductivity...................................................................................8
Chapter 2. Paper Review...........................................................................................9
1. Photodetectors of GaN Thin Film.......................................................9
2. Photodetectors of Nanowires .......................................................................16
2.1. Photoconduction studies on GaN nanowire transistors under UV
illumination………………………………………………..……...…16
2.2. Photoconduction studies on ZnO nanowire Photodetectors and Optical
Switches………………………………………………………..……18
Chapter 3. Experimental Procedure.....................................................................20
1. Fabrication of GaN-nanowire based MSM device.....................................20
2. Catalytic CVD growth of 1D GaN Nanowire...........................................22
3. Structural analysis and optical properties of GaN nanowires…………......24
3.1. Scanning electron microscopy (SEM) ...........................................24
3.2.High-Resolution Transmission Electron microscopy (HR-TEM) ....26
3.4.Cathodoluminescence Spectroscopy (CL)………………...27
4. Electrical measurement of GaN-nanowire MSM device…………………28
Chapter 4. Results and Discussion...................................................................29
1. Fabrication of Metal-Semiconductor-Metal structure...............................29
2. The analyses of Epi-GaN Nanowires.....................................................31
2.1.Morphology………………………......................................................31
2.2.Microstructure.................................................................................33
2.3.Optical properties ………………………………..……................35
3. Electrical properties of M-S-M structure.............................................38
3.1. Current-Voltage (I-V) measurement.............................................38
3.2. Photoconductivity spectra of GaN NWs M-S-M structure...............39
Chapter 5. Conclusions...............................................................................................46
                                

1. V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, A. Zubrilov, in
Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN,
SiC, SiGe . Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John
Wiley & Sons, Inc., New York, (2001).
2. J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B.
P. Keller, U. K. Mishra, S. P. DenBaars, Appl. Phys. Lett. 71, 2572,
(1997).
3. M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J.
Jun, and S. Porowski, Appl. Phys. Lett. 69, 73, (1996).
4. E. K. Sichel, J. I. Pankove, J. Phys. Chem. Solids 38, 330, (1977).
5. V. Bougrov, M. E. Levinshtein, S. L. Rumyantsev, A. Zubrilov, in
Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN,
SiC, SiGe . Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John
Wiley & Sons, Inc., New York, (2001).
6. A. S. Barker, M. Ilegems, Phys. Rev. B 7, 743, (1973)
7. D. D. Manchon, A. S. Barker, J. P. Dean, R. B. Zetterstrom, Solid State
Commun. 8, 1227, (1970).
8. J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B.
P. Keller, U. K. Mishra, S. P. DenBaars, Appl. Phys. Lett. 71, 2572,
(1997).
9. B. Monemar, Phys. Rev. B 10, 676, (1974).
10. M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J.
Jun, and S. Porowski, Appl. Phys. Lett. 69, 73, (1996).
11. J. I. Pankove, Mater. Res. Soc. Symp. Proc. 162, 515 (1990).
12. M. Razeghi, A. Rogalski, J. Appl. Phys. 79 (10) (1996) 7433–7473.
13. D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, M. Razeghi, Appl.Phys. Lett. 70 (8) (1997) 949–951.
14. E. Muñoz, E. Monroy, J.A. Garrido, I. Izpura, F.J. Sánchez, M.A.
Sánchez-Garc´ıa, E. Calleja, Appl. Phys. Lett. 71 (7) (1997) 870–872.
15. P. Kung, X. Zhang, D. Walker, A. Saxler, J. Piotrowski, A. Rogalski,
M. Razeghi, Appl. Phys. Lett. 67 (25) (1995) 3792–3794.
16. Z.C. Huang, D.B. Mott, P.K. Shu, J.C. Chen, D.K. Wickenden, J.
Electron. Mater. 26 (1997) 330–333.
17. D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, M.
Razeghi, Appl. Phys. Lett. 72 (25) (1998) 3303–3305.
18. E. Monroy, T. Palacios, O. Hainaut, F. Omnès, F. Calle, J.F. Hochedez,
Appl. Phys. Lett. 80 (17) (2002) 3198–3200.
19. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F.J. Sanchez, J.
Diaz, M. Razeghi, Appl. Phys. Lett. 74 (5) (1999) 762–764.
20. Q. Chen, J.W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M.Z.
Anwar, M.A. Khan, D. Kuksenkov, H. Temkin, Appl. Phys. Lett. 70
(17) (1997) 2277–2279.
21. E. Monroy, F. Calle, E. Muñoz, F. Omnès, P. Gibart, J.A. Muñoz,
Appl. Phys. Lett. 73 (15) (1998) 2146–2148.
22. H.M. Chen, Y.F. Chen, M.C. Lee, M.S. Feng, , J. Appl. Phys. 82 (2)
(1997) 899–901.
23. A. Bonfiglio, G. Traetta, M. Lomascolo, A. Passaseo, R. Cingolani, J.
Appl. Phys. 89 (10) (2001) 5782–5784.
24. C.V. Reddy, K. Balakrishnan, H. Okumura, S. Yoshida, Appl. Phys.
Lett. 73 (2) (1998) 244–246.
25. D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu and M.
Razeghi: Appl. Phys. Lett. 68 (1996) 2100.
26. M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M.
27. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Blasinghame and A. R.
Bharrarai: Appl. Phys. Lett. 63 (1993) 2455.
28. M. A. Khan, M. S. Shur and Q. Chen: Electron. Lett. 31 (1995) 398.
29. Z. M. Zhao, R. L. Jiang, P. Chen, D. J. Xi, Z. Y. Luo, R. Zhang, B.
Shen, Z. Z. Chen, and Y. D. Zheng, Appl. Phys. Lett. 77 (2000) 444.
30. Zhizhen Ye, Xing Gu, Jingyun Huang, Yu Wang, Qinghui Shao and
Binghui Zhao, Inter, J, Mod, Phys,B Vol. 16(2002) 4310-4313.
31. Bo Shen, Kai Yang, Lan Zang, Zhi-zhong Chen, Yu-gang Zhou, Peng
Chen,
Rong Zhang, Zheng-chun Huang, Hao-shen Zhou and You-dou Zheng,
Jpn. J. Appl. Phys. Vol. 38 (1999) pp. 767–769.
32. Z. C. Huang, D. B. Mott, and P. K. Shu R. Zhang and J. C. Chena) D.
K. Wickenden J. Appl. Phys. 82 (5), 1 September 1997.
33. M. De Vittorio a,, B. Pot`ı a, M.T. Todaro c, M.C. Frassanito a, A.
Pomarico a, A. Passaseo a, M. Lomascolo b, R. Cingolani aSensors
and Actuators A 113 (2004) 329–333.
34. Z. M. Zhao,a) R. L. Jiang, P. Chen, D. J. Xi, B. Shen, R. Zhang, and Y.
D. ZhengJ. Vac. Sci. Technol. B 19.1., JanÕFeb 2001.
35. C. Dekker, Phys. Today 1999, 52, 22.
36. S. J. Tans, R. M. Verschueren, C. Dekker, Nature 1998, 393, 49.
37. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, P. Avouris, Appl. Phys.
Lett. 1998, 73, 2447.
38. S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley, L. J.
Geerligs, C. Dekker, Nature 1997, 386, 474.
39. M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra, A. Zettl, A.
Thess, R. E. Smalley, Science 1997, 275, 1922.
40. J. Hu, M. Ouyang, P. Yang, C. M. Lieber, Nature 1999, 399, 48.
41. Z. Yao, H. W. C. Postma, L. Balents, C. Dekker, Nature 1999, 402,
273.
42. M. S. Fuhrer, J. Nygard, L. Shih, M. Forero, Y. Yoon, M. S. C.
Mazzoni, H. J. Choi, J. Ihm, S. G. Louie, A. Zettl, P. L. McEuen,Science 2000, 288,494.
43. X. Duan, Y. Huang, Y. Cui, J. Wang, C. M. Lieber, Nature 2001, 409,
66.
44. Song Han, Wu Jin, Daihua Zhang, Tao Tang, Chao Li, Xiaolei Liu,
Zuqin Liu, Bo Lei, Chongwu Zhou, Chemical Physics Letters 389
(2004) 176–180
45. Hannes Kind, Haoquan Yan, Benjamin Messer, Matthew Law, and
Peidong Yang, Adv. Mater. 2002, 14, No. 2, January 16

簡易檢索 / 詳目顯示

相關論文