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研究生： 李佩玲
論文名稱： 硼氮共摻雜石墨烯之電子元件
boron and nitrogen co-doped graphene for electronic device
指導教授： 陳貴賢
Chen, Kuei-Hsien
林麗瓊
Lin, Li-Chyong
學位類別： 碩士
Master
系所名稱： 化學系
Department of Chemistry
論文出版年： 2014
畢業學年度： 102
語文別： 中文
論文頁數： 65
中文關鍵詞： 石墨烯 、摻雜 、能隙
英文關鍵詞： Graphene, doping, energy gap
論文種類： 學術論文
相關次數： 點閱：233  下載：13 
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    • 石墨烯是一種二維材料，其厚度只有一層碳原子厚。是目前最薄且最硬的奈米材料，由於其具有獨特的結構與優異的物理特性。可廣泛運用在各個領域上，但因單層石墨烯能帶隙接近於零，故無法應用於半導體產業。開啟能帶結構，單層石墨烯即可以應用於半導體元件。開啟石墨烯能帶結構之方法有量子限制效應、對稱破壞與化學摻雜等。本論文使用熱化學氣相沉積法，藉由改變摻雜源BH3NH3之預熱溫度以及甲烷流量，控制硼和氮在石墨烯中之摻雜濃度，可得不同B-N摻雜濃度與能隙之摻雜石墨烯(boron carbon nitride, BNC)。藉由霍爾效應觀察不同濃度氮硼摻雜石墨烯的電性變化以及利用不同轉印方式和不同測量面積大小，光電子能譜儀、拉曼、探討BNC之鍵結與特性分析。

    Graphene is thick planar sheets of sp2-bonded carbon atoms. It’s the thinnest and strongest nanomaterials, because of its unique structure and excellent physical properties. It can be widely used in various fields, but the single layer graphene (SLG) energy band gap is close to zero and can not be applied to the semiconductor industry. Band gap opened single layer graphene can be used as semiconductor device. Promising opening band gap techniques for SLG include the quantum confinement, symmetry breaking and chemical doping. In this thesis, BN co-doped graphene was synthesized by thermal chemical vapor deposition using doping of boron and nitrogen. The doping concentrations of BN were controlled by changing the preheating temperature of BH3NH3 and mass flow rate of CH4. Then various band gap graphene will be obtained. The characteristics of the BNC were analyzed by XPS, and Raman spectroscopy. By Hall measurement can observe the change of electrical property of BN doped graphene with different transfer method and different size of area.

    致謝 I 中文摘要 II Abstract III 目錄 IV 圖目錄 VII 表目錄 X 第一章 緒論 1 1-1研究動機 1 1-2石墨烯之發現 1 1-3氮化硼之簡介 3 1-4石墨烯之製備 4 1-4-1機械剝離法 4 1-4-2熱裂解磊晶成長於碳化矽上 4 1-4-3化學氧化法 5 1-4-4化學氣相沉積法 5 1-5開啟石墨烯能隙的方法 6 1-5-1量子限制效應 6 1-5-2摻雜 7 1-5-2-1物理摻雜 7 1-5-2-2化學摻雜 7 第二章 文獻回顧 8 2-1石墨烯之拉曼光譜分析 8 2-1-1 石墨烯之特徵峰分析 8 2-1-2石墨烯之品質與層數鑑定 11 2-2石墨烯之轉印方法 12 2-2-1高分子法 12 2-2-2無高分子法 15 第三章 實驗儀器與方法 17 3-1石墨烯與摻雜石墨烯之合成 17 3-2石墨烯與摻雜石墨烯之轉印 21 3-3石墨烯與摻雜石墨烯之分析儀器與原理 22 3-3-1拉曼 22 3-3-2霍爾效應 24 3-3-3蒸鍍 27 3-3-4掃描式電子顯微鏡 28 3-3-5光電子能譜儀 29 第四章 結果與討論 30 4-1石墨烯之電極選擇性 30 4-2石墨烯之網格設計 30 4-2-1方格狀銅網 30 4-2-2條狀銅網 32 4-2-3自行設計網格 32 4-3 石墨烯轉印之PMMA稀釋改良法 34 4-3-1 PMMA殘留於石墨烯之表面分析 34 4-3-2 PMMA殘留於石墨烯之化學成分分析 36 4-3-3 PMMA殘留於石墨烯之拉曼光譜分析 37 4-3-4 PMMA殘留於石墨烯之霍爾量測 38 4-3-5二氧化矽基板影響 39 4-4 石墨烯之電性分析 40 4-4-1測量面積大小對石墨烯電性的影響 40 4-4-2轉印方式對石墨烯電性的影響 42 4-5氮、硼共摻雜石墨烯特性分析 44 4-5-1氮、硼共摻雜濃度對石墨烯電性的影響 44 4-5-2氮、硼共摻雜石墨烯之光電子能譜分析 46 4-5-3 前驅物摻雜於石墨烯之模型分析 50 4-5-4 氮、硼共摻雜石墨烯之拉曼光譜分析 51 4-5-5摻雜石墨烯之霍爾量測分析 53 4-6石墨烯與摻雜石墨烯之場效電晶體特性分析 54 4-6-1轉印方式對石墨烯場效電晶體之電滯效應 55 4-6-2轉印方式對摻雜石墨烯場效電晶體之電滯效應 57 4-6-3摻雜石墨烯場效電晶體元件設計之討論 59 第五章結論與未來展望 60 參考文獻 61  

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