本實驗係以二硫化鐵奈米晶體 (FeS2 NCs) 作為近紅外光偵測器的主動層，並以氧化锌 (ZnO) 作為元件 blocking layer 之研究。二硫化鐵為非直接能隙半導體，擁有較窄的半導體能隙 (0.95 eV) ，且對光有很強的吸收，吸收範圍可以到近紅外光波段，之所以使用二硫化鐵奈米晶體的原因是因為材料合成容易、價錢低廉且是由對環境無害的元素組成。本實驗的二硫化鐵奈米晶體是利用溶液法合成，並可以進一步地藉由調控表面活性劑和溶劑比例來控制二硫化鐵奈米晶體的形狀以及在溶液中的分散性，接著藉由 XRD 和 TEM 可以分析其晶格和構型。而經由元件所量測的 J-V characteristics 及 temporal photocurrent response 得知，以二硫化鐵奈米晶體作為光偵測器之元件，確實在可見光及近紅外光波段 (波長 > 715 nm) 皆有光電流產生。

In this thesis, the near infrared photodetectors based on FeS2 nanocrystals were studied. We used FeS2 nanocrystals as the active layer and ZnO as blocking layer for the devices. FeS2 is a indirect band gap semiconductor which has a narrow band gap of 0.95 eV with high absorption to the light even near-infrared range, and the advantage in using the FeS2 nanocrystals is because they are low-cost, abundant and non-toxic materials. The well dispersed FeS2 nanocrystals were synthesis by Solution –phase methods, furthermore, we could control the shapes of FeS2 nanocrystals by adjust the ratio of surfactant to solvent, then the crystal morphology and structure were identified by TEM and XRD. In conclusion, the photodetectors based on FeS2 nanocrystals response in both the visible and infrared ( λ > 715 nm) have been demonstrated by Current density–voltage characteristics and temporal photocurrent response of the devices.

[1]. IPAC Staff. "Near, Mid and Far-Infrared". NASA ipac. http://www.ipac.caltech.edu/Outreach/Edu/Regions/irregions.html. Retrieved 2007-04-04.
[2]. Kallhammer, J.E. Imaging; The road ahead for car night-vision Nature Photon. (2006), 12–13.
[3]. Barton, J. B., Cannata, R. F. & Petronio, S. M. InGaAs NIR focal plane arrays for imaging and DWDM applications. Proc. SPIE 4721. (2002), 37–47.
[4]. Schmitt, J. M., Xiang, S. H. & Yung, K. M. Differential absorption imaging with optical coherence tomography. J. Opt. Soc. Am. (1998), 2288–2296.
[5]. K. Lee, M. Shur, A. Fjeldly, and T. Ytterdal, Semiconductor Devics Modeling for VLSI, Prentice-Hall International Editions.（1993）
[6]. M. Sze, D. J. Coleman, R. and A. Loya, ; Solid-State Electronics. (1971), 14, 1209.
[7]. W. Schottky, R. Stromer, and F. Waible, ; Hochfrequenztechnik. (1931), 37, 162–165.
[8]. S. M. Sze， Physics of Semiconductor Devices. （1981）, 2nd， 744.
[9]. Q.Z.Liu, L.S.Yu, F. Deng, and S.S. Lau J.M. Redwing, J.Appl.Phy. (1998), 84, 881 .
[10]. Ennaoui, A.; Fiechter, S.; Jaegermann, W.’ Tributsch, H. J. Electrochem. Soc. (1986), 133, 97.
[11]. Wilcoxon J P, Newcomer P P and Samara G A, Solid State Commun. (1996), 98, 581.
[12]. Ennaoui A and Tributsch H , Sol. Energy Mater. (1986), 14, 461.
[13]. M. Blanchard et al; Geochimica et Cosmochimica Acta 71. (2007), 624–630.
[14]. Vayssieres, L.; Keis, K.; Hagfeldt, A.; Lindquist, S.E., Chemistry of Materials. (2001), 13, 4395.
[15]. K. L. Chopra and S. R. Das, "Thin film Solar Cells", (Plenum, New York,Z). (1983).
[16]. H. Rensmo, K. Keis, H. Lindstrom, S. Sodergren, A. Solbrand, A.Hagfeldt, S. E. Lindquist, "High Light-to-Energy Conversion Efficiencies for Solar Cells Based on Nanostructured ZnO Electrodes", J. Phys. Chem. B. (1997), 101, 2598–2601.
[17]. Gur, I.; Fromer, N. A.; Geier, M. L.; Alivisatos, A. P. Science. (2005), 310, 462-465.
[18]. Steven A. McDonald, Gerasimos Konstantatos, Shiguo Zhang, Paul W. Cyr, Ethan J. D. Klem, Larissa Levina & Edward H. Sargent; Nature Materials. (2005), 4, 138 – 142.
[19]. Joseph M. Luther, Matt Law, Matthew C. Beard, Qing Song, Matthew O. Reese, Randy J. Ellingson, and Arthur J. Nozik; Nano Lett. (2008), 8 , 3488.
[20]. Tobias Rauch, Michaela Bo‥berl, Sandro F. Tedde1, Jens Fu‥rst, Maksym V. Covalence, Günter Hisser, Eli Lemmer, Wolfgang Heiss, Oliver Hayden; NATURE PHOTONICS. (2009), 3, 332–336.
[21]. Edward h. sergeant; NATURE PHOTONICS, (2009), 3 , 325-331.
[22]. Cyrus Wadia, A. Paul Alivisatos, Daniel M. Kammen; Environ. Sci. Technol. (2009), 43, 2072–2077.
[23]. K. Biiker, PI. Alonso-Vante, and H. Tributsch. J. Appl. Phys. (1992), 72, (12), 15
[24]. B.G. Streetman, S.K. Banerjee, “Solid state electron devices,6th edition ”, PearsonPrentice Hall ,New Jersey. (2006), 158–208.
[25]. R. Cebulla, R. Wendt, and K. Ellmer, J. Appl. Phys. (1998), 83, 1087.
[26]. S. Hore and R. Kern, Appl. Phys. Lett. (2005), 87, 263504
[27]. J. Xia, N. Masaki, K. Jiang, and S. Yanagida, J. Phys. Chem. C. (2007), 111, 8092
[28]. P. J. Cameron and L. M. Peter, J. Phys. Chem. B. (2003), 107, 14394
[29]. Y. G. Wang, S. P. Lau, H. W. Lee, S. F. Yu, B. K. Tay. X. H. Zhang, K. Y. Tse, . H. Hng, J. Appl. Phys. (2003), 94, 3.
[30]. F.J. Pern, B. To, C. DeHart, X. Li, and S.H. Glick; NREL; “Degradation of ZnO Window Layer for CIGS by Damp-Heat Exposure”. (2008).
[31]. http://www.dur.ac.uk/~dph0www5/images/am1.jpg
[32]. A. Yakimov, S. R. Forrest, Appl. Phys Lett. (2002), 80, 1667-1669.
[33]. Christoph J. Brabec; N. Serdar Sariciftci; Jan C. Hummelen, Advanced Functional Materials. (2001), 11, 15–26.
[34]. Ganf Li; Vishal shrotriya; Jinsong Huang; Yan Yao, Tom Moriarty; Keith Emery; Yang Yang, Nature materials. (2005).
[35]. K. L. Chopra and S. R. Das, "Thin film Solar Cells", (Plenum, New York). (1983).
[36]. L.F. Xu, Q. Liao, J.P. Zhang, X.C. Ai and D.S. Xu.; J. Phys. Chem. C. (2007), 111, 4549–4552.
[37]. W. William Yu and Xiaogang Peng; Angew. Chem. Int. Ed. (2002), 41, No. 13.
[38]. X. Y. Chen, Z. G. Wang, X. Wang, J. X. Wan, J. W. Liu, and Y. T. Qian; Inorg. Chem. (2005), 44, 951.
[39]. H. Duana, and Y. F. Zhenga, Y. Z. Dong, X. G. Zhang, and Y. F. Sun Materials Research Bulletin. (2004), 39, 1861.
[40]. A. Ennaoui, S. Fiechter, C. Pettenkofer, N. Alonso-Vante, K. Bilker, M. Bronold, C. Hpfner and H. Tributsch,; Solar Energy Materials and Solar Cell. (1993), 29, 289.
[41]. Baoquan Sun and Henning Sirringhaus; Nano Lett. (2005), 5, 12.
[42]. http://en.wikipedia.org/wiki/Work_function
[43]. Yangang Han, Gang Wu, Haiguo Li, MangWang and Hongzheng Chen, Nanotechnology. (2010), 211, 85708.
[44]. Quist P A C, Beek W J E, Wienk M M, Janssen R A J, Savenije T J, Siebbeles L D A. J. Phys. Chem. B. (2006), 110, 10315.