全無機鈣鈦礦具有優異的光吸收、高載子遷移率與優異光響應等優點，本實驗在室溫下合成CsPbBr3鈣鈦礦作為光偵測器(Photon detector, PD)之吸光層與電阻式記憶體(Resistive random access memory, RRAM)之絕緣層，並以簡易之結構Ag/PMMA/CsPbBr3/ITO作為配置，為避免陰極與陽極直接接觸，將PMMA溶液覆蓋在CsPbBr3上方，除了避免上下電極直接接觸之外，並填補CsPbBr3晶粒與晶粒間之空缺，降低晶界間的缺陷，使鈣鈦礦當作偵測器之吸收層時，增加照光後載子的收集效率，作為記憶體，可減少頂部 (Ag) 和底部 (ITO) 電極之間漏電路徑之形成。
本實驗利用ITO(氧化銦錫)串聯相同結構之元件，在頂部(Ag)電極施加正偏壓時，可作為記憶體。若施加負偏壓時，作為光偵測器。通過改變偏壓與照光條件探討光偵測器產生之光電流的變化，進而達到記憶體以低電壓驅動之目的。

All-inorganic perovskite has the advantages of excellent light absorption, high carrier mobility and excellent light response. In this experiment, CsPbBr3 perovskite was synthesized at room temperature as the light-absorbing layer and resistance of the Photon detector (PD) The insulating layer of Resistive random access memory (RRAM) is configured with a simple structure Ag/PMMA/CsPbBr3/ITO. To avoid direct contact between the cathode and the anode, the PMMA solution is covered on the top of CsPbBr3, except to avoid direct contact between the upper and lower electrodes.In addition, it also fills the gaps between the CsPbBr3 crystal grains and reduces the defects between the grain boundaries. When the perovskite is used as the absorption layer of the detector, the collection efficiency of carriers after illumination is increased. As a memory, it can reduce the formation of leakage paths between the top (Ag) and bottom (ITO) electrodes.
In this experiment, ITO (Indium tin oxide) elements of the same structure are connected in series. When a positive bias is applied to the top (Ag) electrode, it acts as a memory, and when a negative bias is applied, it acts as a photodetector. By changing the light intensity, explore the changes in the photocurrent generated by the photon detector under different voltages, and then achieve the goal of driving the memory at low voltage

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