我們利用拉曼散射光譜分析MBE成長的矽、鍺超晶格樣品之結構特性、晶層厚度及E1能隙。以不同波長的雷射入射樣品，所得之拉曼光譜在100cm-1以下低頻部份，有清晰的縱向折疊聲學聲子訊號，由Rytov理論模型及光彈力學計算結果，擬合矽、鍺超晶格樣品折疊聲子拉曼位移及拉曼散射強度，所求得之矽、鍺超晶格中矽、鍺層的平均厚度與樣品TEM測得之結果一致。依據Linear-chain-model理論分析Ge-Ge光學聲子，得知矽、鍺超晶格樣品中鍺層粗糙之程度。當以532.2nm波長雷射入射所測得之拉曼光譜在200cm-1附近有一波包，此為連續性散射結果，表示這個波長雷射能量接近共振能帶，以連續性散射理論擬合求出共振能階之能量為2.32eV，此值較鍺塊材的E1能隙2.22eV為高。應是鍺層受到量子井侷限作用而使E1能隙增大約0.1eV。以476nm雷射入射，觀察到高頻部份樣品能隙所產生的螢光效應，其中心能量與連續性散射得到的結果相同；其半高寬約300±50meV，故而有類似連續性能帶結構，導致我們在514.5nm、488nm雷射入射時仍可看到連續性散射訊號。在比對不同能量雷射入射時，Ge-Ge聲子、Si-Ge聲子相對於Si-Si聲子的強度比值，可明顯看出其對應的共振雷射能量皆為接近樣品能隙的中心能量。在變溫拉曼散射實驗中，發現聲學聲子的頻率、半高寬受溫度影響的變化量遠小於光學聲子，顯示兩種聲子是源於不同之振動機制。因為折疊聲子考慮的是層跟層之間的振動模，其波向量為超晶格週期的函數，然而在300K以下的範圍內，溫度變化對超晶格厚度影響非常小，故聲學聲子之拉曼譜線相對於光學聲子變化非常小。

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