鰭式電晶體廣泛應用在許多3C產品中，例如：手機iPhoneA9處理器、電腦IC晶片……等，而在未來製程節點中，改善次臨界擺幅SS(Subthreshold Swing)降低元件之操作電壓與功率極為重要，本論文藉由導入HfZrO2鐵電材料當作電晶體的介電層，應用鐵電材料之負電容效應改善次臨界擺幅(SS)。
近期IBM團隊提出奈米片結構電晶體(Nanosheet FET)，有別於鰭式電晶體，奈米片電晶體是參考Gate-All-Around(GAA)電晶體結構， Si通道設計成水平的結構，可有效解決鰭式電晶體鰭高的製程瓶頸，並廣泛應用在各大領域中，例如:人工智慧(AI)、虛擬實境(VR)……等，本論文是以鐵電材料HfZrO2作為介電層，應用於奈米片電晶體中，達到俱有鐵電負電容效應之奈米片電晶體，其中黃光製程部分皆使用I-line步進機，可以提高生產效率。

FinFET transistors were used in many 3C products, e.g., iPhoneA9 CPU, GPU and Bitcoin Mining Hardware. Moreover, the improvement of SS(Subthreshold Swing) may reduce driving voltage and power consumption in next-generation technology node. In this work, the super steep subthreshold swing is obtained by NC effect using HfZrO2 for dielectric.
The IBM group proposed the Nanosheet GAA FET which is a Fin-like in horizontal. The Si channel were designed a horizontal direction, and solve process difficult of the Fin height in the FinFET process. The application are such as AI, VR, …e.g. This work is used Ferroelectric HfZrO2 as Gate for NS-GAA Transistors. The Lithography process is employed 365nm I-line stepper with self-alignment and cost down.

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