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研究生: 呂俊億
論文名稱: n-型氮化銦薄膜之光譜性質研究
Optical studies of n-type InN thin film
指導教授: 劉祥麟
Liu, Hsiang-Lin
胡淑芬
Hu, Shu-Fen
學位類別: 碩士
Master
系所名稱: 物理學系
Department of Physics
論文出版年: 2008
畢業學年度: 96
語文別: 中文
論文頁數: 90
中文關鍵詞: 氮化銦螢光光譜超導
論文種類: 學術論文
相關次數: 點閱:193下載:1
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  • 我們研究利用有機金屬氣相磊晶法成長在 (0001) 藍寶石基板上的 n 型氮化銦薄膜 (膜厚為 120 ~ 220 nm 左右) 之光譜性質。我們觀察到n 型氮化銦薄膜的室溫光激螢光光譜強度最大的頻率位置約在 0.8 eV。我們也發現另一個出現在 0.96 eV的光激螢光訊號,其物理機制目前尚未明瞭。此外,主要的光激螢光峰值隨著溫度下降,出現些微的紅移、藍移以及紅移的現象,其原因來自於熱擴張效應、帶尾能隙的載子受熱擾動及聲子干擾造成晶格受熱擾動等影響而成。

    我們量測 n 型氮化銦薄膜的變溫反射光譜 (溫度範圍為 10 K 和 340 K 之間)。室溫遠紅外光光學電導率包括了在448 cm-1 與475 cm-1的A1(TO) 和 E1(TO) 兩個振動模。利用非簡諧振盪的模型可以解釋聲子擬合參數隨溫度的變化。有趣地是,居德電漿頻率 (~ 5200 cm-1) 及能隙行為之吸收峰 (~ 7500 cm-1) 不隨溫度變化,反之,電荷載子的碰撞率隨著降溫而變小。我們也藉由橢圓儀量測n 型氮化銦薄膜的光譜響應,介電函數顯示在 1.4 eV、3 eV、5 eV、5.3 eV以及6.1 eV 具有吸收峰,這些吸收峰的能量位置與氮化銦之電子結構理論計算結果相符。

    致謝 …………………………………………………………… i 中文摘要 ………………………………………………………… ii Abstract ………………………………………………………… iii 目錄 ……………………………………………………………… iv 表目錄 …………………………………………………………… vi 圖目錄 …………………………………………………………… vii 第一章 緒論 …………………………………………………… 1 第二章 研究背景 ……………………………………………… 5 2-1 n-型氮化銦薄膜的特性 ……………………………… 5 2-2 n-型氮化銦薄膜超導特性之理論模型 ……………… 8 第三章 實驗儀器設備及其基本原理 ………………………… 17 3-1光譜儀系統 …………………………………………… 17 3-2光譜分析原理介紹 …………………………………… 24 第四章 實驗樣品特性 ………………………………………… 37 第五章 實驗結果與討論 ……………………………………… 48 5-1 光激螢光光譜性質 …………………………………… 48 5-2 全頻光譜性質 ………………………………………… 51 第六章 結論與未來展望 ……………………………………… 82 參考文獻 ……………………………………………………… 85

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