在超高真空環境下，本研究利用程溫脫附法(TPD)、歐傑電子光譜(AES)、低能量電子繞射儀(LEED)研究順、反-式二苯乙烯在Ag/Ge(111) -(√3x√3) R30°表面上的吸附與脫附情形。
Ag/Ge(111) -(√3x√3) R30°表面的製備是利用加熱銀槍將銀沈積於100K的Ge(111)c(2x8)表面上，再加熱到500K，歐傑電子光譜(AES)用來決定單層吸附的量，也利用低能量電子繞射儀(LEED)觀察表面的吸附結構。
利用程溫脫附法(TPD)在表面溫度100K、單層吸附的暴露量時，追蹤順式-二苯乙烯的TPD有兩個脫附峰出現在243K及275K、分別代表多層吸附物(multilayer)及單層吸附物(monolayer)；追蹤反式-二苯乙烯的TPD則只有一個脫附峰出現在282K，代表多層吸附及單層吸附物的脫附溫度太相近重疊造成的結果。
當表面溫度提升到238K再暴露順式-二苯乙烯，追蹤此分子其TPD的脫附溫度為278K，代表在較高溫的表面，分子排列較為整齊，所以脫附溫度比較高。
模擬二苯乙烯的脫附機制，順、反式二苯乙烯單層吸附物的脫附皆採取1/2級之脫附機制，脫附時是從周圍開始向中間脫附。

The adsorption and thermal desorption of stilbene on Ag/Ge(111) -(√3×√3)R30° (Ag/Ge-√3) have been studied using the combination techniques of Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and temperature programmed desorption (TPD).
The Ag/Ge-√3 surface was prepared by thermal deposition of Ag onto Ge(111) substrate of 100 K, followed by postannealing to 500 K for 2 min. The 1ML Ag coverage, was estimated from AES measurements. The surface structure was confirmed by LEED.
At coverages of 1 monolayer, TPD studies showed that for cis-stilbene(CSB) molecular desorption two peaks were observed at Tp(peak temperature)=243K、275K, which are attributed to multilayer and monolayer desorption, respectively. TPD traces of trans-stilbene(TSB) show only one single peak at Tp(peak temperature)= 282K, which can be attributed to the overlapping monolayer and mutilayer desorption peaks. No other thermal desorption products were detected during the heating process.
From the coverage dependent analysis of TPD spectra, it was found that the desorption of CSB and TSB from Ag/Ge-√3 exhibits half-order desorption kinetics, suggesting the desorption starts from the circumstance. These results are compared to the previous STM study (Langmuir, 2003, 19, 822-829) in which the structure of CSB cluster formed on Ag/Ge-√3 upon annealing was reported.

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