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研究生: 廖冠瑋
Liao, Kuan-Wei
論文名稱: 二硫化鉬超薄膜於光催化二氧化碳還原反應之應用
Ultra-Thin Film MoS2 Photocatalysts for Photocatalytic CO2 Reduction Application
指導教授: 陳貴賢
Chen, Kuei-Hsien
林麗瓊
Chen, Li-Chyong
口試委員: 陳貴賢
Chen, Kuei-Hsien
林麗瓊
Chen, Li-Chyong
陳家俊
Chen, Chia-Chun
口試日期: 2021/07/22
學位類別: 碩士
Master
系所名稱: 化學系
Department of Chemistry
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 79
中文關鍵詞: 光觸媒二氧化碳光催化還原三奈米二硫化鉬薄膜不同基板拉曼應變效應
英文關鍵詞: 3 nm MoS2 thin film, CO2 photoreduction, photocatalysts, different substrates, strain effect, Raman
研究方法: 實驗設計法主題分析比較研究觀察研究
DOI URL: http://doi.org/10.6345/NTNU202100931
論文種類: 學術論文
相關次數: 點閱:165下載:7
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  • 隨著全球暖化的影響,地球上的環境也發生了巨大的變化,因此若能將二氧化碳有效轉換成碳氫化合物,必定能為地球減少許多負擔,因此本研究利用人造光合成系統將其轉換,作為新興的替代能源,期望能改善環境和能源議題。
    本論文使用的二維材料為過渡金屬二硫族化合物,並選擇二硫化鉬薄膜作為光觸媒材料。使用熱蒸鍍和化學氣相沉積法來合成三奈米二硫化鉬薄膜於不同基板上,如二氧化矽/矽、氧化鋁、二氧化矽、鈦酸鍶基板,並將這些材料作為光觸媒,並藉由應變效應將其應用在探討二氧化碳光催化還原上。
    在合成不同厚度二硫化鉬的製程中,我們可以有效的控制二硫化鉬薄膜的厚度,並將其藉由拉曼分析顯示,不同厚度的二硫化鉬薄膜其表面是非常均勻的,且具備良好的可見光吸收波段,並根據實驗結果得知三奈米二硫化鉬薄膜具有最好的光催化效率。並使用不同硫化的製程來將三奈米二硫化鉬薄膜優化,根據拉曼和光激發螢光結果得知,使用硫粉製程的三奈米二硫化鉬薄膜品質是最好的,並根據實驗結果得知其光催化效率比使用硫化氫較高。
    綜合以上實驗結果,我們選用硫粉製程的三奈米二硫化鉬薄膜,並成長在四種不同的基板上,而這些基板分別為二氧化矽/矽、氧化鋁、二氧化矽、鈦酸鍶基板,並藉由儀器分析,來測定其厚度、應變效應以及能隙大小,根據實驗結果可以得知,當應變較小時,其光催化效率不好,當應變增加到一定值時,其光催化效率為最高,而當應變太大時,其會增加光催化產物選擇性,而這些反應機制值得未來進一步地加以探討。

    Due to global warming, many scientists are studying how to reduce the greenhouse effect. This study used the transition metal dichalcogenides (TMDCs) as the photocatalysts for CO2 photoreduction. Molybdenum disulfide (MoS2) thin-film has been particularly found in unique applications in catalysis, optoelectronics, transistors, etc.
    Lattice strain can enhance the activity and selectivity of electrochemical reactions by breaking the linear scaling relationship. Notwithstanding, the explicit use of strain to affect the CO2 reduction reaction (CO2RR) is rarely reported. In this perspective, we highlight the opportunity to use strain to affect the activity and selectivity of CO2RR photocatalysts. We use the thermal evaporation and chemical vapor deposition two-step process to synthesize the uniform molybdenum disulfide (MoS2) thin-film on 4 different kinds of substrates, such as silicon dioxide, sapphire, silica, and STO. By using different kinds of substrate molybdenum disulfide thin-film as photocatalysts, and investigate molybdenum disulfide (MoS2) thin-film strain effect for CO2 photoreduction.
    In our process, we can well control the different thicknesses of molybdenum disulfide (MoS2), and it shows good light absorption in the visible light region. Furthermore, the result of GC had shows 3 nm molybdenum disulfide (MoS2) thin-film possess the best photoreduction efficiency than other thickness. Meanwhile, we also do the different kinds of sulfurization processes to better our 3 nm molybdenum disulfide (MoS2) thin-film. The Raman and PL result shows that the sulfur powder process of 3 nm molybdenum disulfide (MoS2) thin-film has better quality than the others. It also shows the highest photoreduction efficiency than the H2S process.
    Combining the above results, we use the sulfur process to synthesize 3 nm molybdenum disulfide (MoS2) thin-film, and growing on 4 different kinds of substrates. According to Raman analysis, we can get the E12g and A1g vibration mode, using these two vibration modes to compute the strain and plot the strain-charge doping map (ε-n map). The GC result shows the lowest strain has the lowest photoreduction efficiency when the strain increases to a specific value it shows the highest photoreduction efficiency. If the strain increases too much, it will increase the selectivity of products, and these reaction mechanisms are worthy of further exploration in the future.

    致謝 I 中文摘要 II Abstract III 目錄 V 圖目錄 VIII 表目錄 XI 第一章 緒論 1 1.1 前言 1 1.2 研究動機 4 第二章 文獻探討 5 2.1 光觸媒的原理 5 2.2 光催化還原二氧化碳 6 2.3 金屬氧化物光觸媒系統 9 2.4 金屬硫化物光觸媒系統 9 2.5 過渡金屬二硫族化物(TMDCs)介紹 10 2.6 二硫化鉬結構與特性 14 2.7 二硫化鉬之應變效應 18 2.8 TMDCs應用於二氧化碳光催化還原 21 第三章 實驗方法與儀器介紹 25 3.1 實驗儀器 25 3.1.1 熱蒸鍍機(Thermal Evaporation Deposition) 25 3.1.2 化學氣相沉積(Chemical Vapor Deposition, CVD) 27 3.2 量測儀器 29 3.2.1 拉曼光譜儀(Raman Spectrometer) 29 3.2.2 原子力顯微鏡(Atomic Force Microscope, AFM) 30 3.2.3 紫外光-可見光光譜儀(Ultraviolet-Visible Spectrometer, UV-Vis) 33 3.2.4 光激發螢光光譜儀(Photoluminescence Spectrometer, PL) 34 3.2.5 氣相管柱層析儀(Gas Chromatography, GC) 36 3.3 實驗流程 39 3.3.1 基板前處理 39 3.3.2 熱蒸鍍薄膜沉積系統與製程 39 3.3.3 化學氣相沉積系統與製程 40 3.3.4 實驗流程圖 42 第四章 薄膜特性分析與討論 43 4.1 厚度取向的二硫化鉬薄膜鑑定與分析 43 4.1.1 原子力顯微鏡(AFM)表面分析 43 4.1.2 拉曼光譜分析 45 4.1.3 紫外光-可見光光譜儀分析 47 4.1.4 光激發螢光光譜儀分析 50 4.1.5 氣相管柱層析儀分析 52 4.2 不同硫化製成的二硫化鉬薄膜 53 4.2.1 原子力顯微鏡(AFM)表面分析 53 4.2.2 拉曼光譜分析 55 4.2.3 光激發螢光光譜儀分析 57 4.2.4 氣相管柱層析儀分析 59 4.3 3 nm MoS2薄膜之基板誘導應變 62 4.3.1 原子力顯微鏡(AFM)表面分析 62 4.3.2 拉曼光譜分析 64 4.3.3 紫外光-可見光光譜儀分析 67 4.3.4 氣相管柱層析儀分析 69 第五章 結論 72 參考文獻 73

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