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Author: 楊智傑
Yang, Chih-Chieh
Thesis Title: 在大氣環境下帶電摩擦介面中單層石墨烯和單層六方氮化硼之吸附特性
The Adhesive Properties of Single-Layer Graphene and Single-Layer Hexagonal-Boron Nitride in Sliding Electrical Contact Interface under Ambient Conditions
Advisor: 邱顯智
Chiu, Hsiang-Chih
Committee: 邱顯智
Chiu, Hsiang-Chih
駱芳鈺
Lo, Fang-Yu
莊程豪
Chuang, Cheng-Hao
Approval Date: 2024/06/25
Degree: 碩士
Master
Department: 物理學系
Department of Physics
Thesis Publication Year: 2024
Academic Year: 112
Language: 中文
Number of pages: 47
Keywords (in Chinese): 單層石墨烯單層六方氮化硼原子力顯微鏡滑動摩擦起電含氧官能基表面吸附力
Keywords (in English): Single-layer graphene, Single-layer hexagonal boron nitride, Atomic force microscopy, Sliding frictional electrification, Oxygen-containing functional groups, Adhesion
Research Methods: 實驗設計法
DOI URL: http://doi.org/10.6345/NTNU202401636
Thesis Type: Academic thesis/ dissertation
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  • 本實驗利用原子力顯微鏡(Atomic Force Microscopy, AFM)研究了二氧化矽基板上的單層石墨烯(Single Layer Graphene, SLG)和單層六方氮化硼(Hexagonal Boron Nitride, h-BN)在滑動摩擦起電區域下的吸附性質對濕度的變化。首先,我們使用導電式原子力顯微鏡(Conductive Atomic Force Microscopy, c-AFM),在大氣環境下通過帶有偏壓的探針摩擦SLG和h-BN表面,以建立滑動摩擦起電。我們改變五種不同的環境濕度來量測矽探針與摩擦區域間的吸附特性。我們的實驗結果顯示,在SLG表面使用正偏壓進行帶電摩擦後,由於摩擦過程中產生的結構缺陷,將使摩擦過的SLG表面與未摩擦之前相比產生較大的吸附力。然而,當使用負偏壓進行帶電摩擦時,摩擦過的SLG表面的吸附力會顯著高於使用零伏特和正偏壓摩擦後的表面。這是因為當我們施加負電壓進行帶電摩擦時,探針與探針表面間的奈米水橋將會被電解,產生的氫氧根將使得石墨烯表面被氧化並形成大量含氧官能團。這些含氧官能團將會吸收大氣中的水分子,使得矽探針與摩擦區域之間更容易產生毛細水橋並導致更大的吸附力。另一方面,當我們對h-BN表面施加負偏壓摩擦時,與正偏壓和零伏特摩擦後的表面相比,摩擦區域的吸附力沒有顯著差異,這表明h-BN表面沒有像SLG表面那樣發生官能基化的現象。我們的研究結果可能有助於將SLG和h-BN應用於具有帶電摩擦介面的奈米機電元件中。

    In this study, we investigated the adhesive properties of single-layer graphene (SLG) and single-layer hexagonal boron nitride (h-BN) on silicon dioxide substrates under sliding electrical contact using atomic force microscopy (AFM). First, we used conductive atomic force microscopy (c-AFM) to slide an electrically-biased c-AFM probe on the surfaces of SLG and h-BN, creating sliding electrical contact. We measured the adhesive properties of the rubbed areas on SLG and h-BN using a silicon AFM probe under various environmental humidity. Our results showed that after rubbing the SLG surface with a positive bias, the adhesive forces measured on the rubbed area were slightly higher than those on the untreated surface, due to the structural defects generated during the sliding process. However, when a negative bias was used during rubbing, the adhesive forces on the SLG surface were significantly higher than the forces measured on SLG treated with zero volts or positive bias. This increase in adhesive forces is attributed to the electrolytic reaction of the nano meniscus between the probe and the surface when a negative bias was used, generating hydroxyl (OH-) that will oxidize the SLG surface , leading to the formation of numerous oxygen-containing functional groups on the SLG surface. These oxygen-containing functional groups will easily absorb ambient water molecules that resulting in larger water menisci between the silicon AFM probe and the rubbed SLG surface, giving rise to larger adhesive forces. On the other hand, when a negative bias was applied to rub the h-BN surface, the adhesive force in the rubbed area showed no significant differences compared to the surfaces treated with positive bias and zero volts, indicating that no functionalization occurred on the h-BN surface as it did on the SLG surface. Our findings may aid in the application of SLG and h-BN in nano-devices that require sliding electrical contacts.

    摘要 i Abstract ii 目錄 iv 圖目錄 vi 表目錄 viii 第1章 序論 1 第2章 原子力顯微鏡簡介 3 2-1 原子力顯微鏡的歷史 3 2-2 原子力顯微鏡的架構 4 2-3 原子力顯微鏡-基本模式介紹 5 2-3-1 接觸式模式(Contact mode) 5 2-3-2 非接觸式模式(Non-contact mode) 5 2-3-3 輕敲式模式(Tapping mode) 6 2-3-4峰值力輕敲模式(Peakforce tapping mode) 6 2-4 力與距離圖(Force-distance curve) 8 2-5單點量測(Ramp) 9 2-6 力曲線三維成像模式(Force-volume) 9 2-7 探針彈性係數校正(Spring constant) 10 第3章、實驗方法和樣品製備 12 3-1石墨烯和六方氮化硼的製備方法 12 3-1-1 機械剝離法 (Mechanical Exfoliation) 12 3-1-2 化學氣相沉積法 (Chemical Vapor Deposition) 13 3-2 石墨烯和六方氮化硼的轉置方法:氣泡剝離法(Bubble-assisted method) 14 3-3 滑動摩擦起電 15 3-4 相對濕度自動控制系統 16 3-5 吸附力性質量測 17 3-6 拉曼光譜性質量測 17 3-7 紅外光譜性質測量 19 第4章 實驗結果與討論 22 4-1 SLG/二氧化矽基板表面形貌 22 4-2單層石墨烯的拉曼光譜分析 23 4-3 -10V磨擦後的SLG紅外線光譜分析 24 4-4經-10V和+10V與0V摩擦後石墨烯的力與距離圖分析 25 4-5石墨烯摩擦區域的表面吸附力對濕度的變化 28 4-6單層六方氮化硼/二氧化矽基板表面形貌 31 4-7單層六方氮化硼的拉曼光譜 32 4-8經-10V和+10V與0V摩擦後六方氮化硼的力與距離圖分析 33 4-9 單層六方氮化硼摩擦區域的表面吸附力對濕度的變化 36 4-10單層六方氮化硼和單層石墨烯之吸附力比較 38 第5章 結論 39 參考文獻 40

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