本實驗利用低壓化學氣相沉積系統LPCVD （low pressure chemical vapor deposition）長成矽量子點，藉由調控NH3和Si2H2Cl2氣體流量與沉積時間，將量子點嵌入於氮化矽中（Si3N4）形成三明治結構。並探討是否需經由再退火（post-anneal）而形成量子點。此外，也藉由控制薄膜之厚度調變量子點大小，以及調變薄膜層積數量以達到所需之量子點層數，其大小及層數皆會應用在分析與太陽能元件上。之後利用原子力顯微鏡AFM（atomic force microscopy）掃描樣本表面，比較有無量子點之表面粗糙度差別。利用高解析穿透式電子顯微鏡HRTEM（high resolution transmission electron microscopy）觀測是否有量子點結晶現象，同時估算出量子點大小及其分佈密度。利用GIXRD （grazing incidence X-Ray diffraction）分析薄膜中是否有結晶現象，並利用Scherrer formula計算出量子點平均晶徑變化。最後利用光激螢光（photoluminescence）觀測量子點發放螢光現象，並進而推算出量子點大小及能階分裂狀態。
最後將矽量子點應用至太陽能電池中，並量測其效率（efficiency）與外部量子效應EQE（external quantum efficiency），並討論為何量子點太陽能電池效率未能提升。（量子點太陽能電池效率0.7%，無量子點則為6.9%）。

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