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研究生： 戴志偉
Chih-Wei Tai
論文名稱： 非晶矽、微晶矽之應力分析於太陽能電池與薄膜電晶體應用
Mechanical Stress Analysis of Amorphous and Microcrystalline Silicon in Solar Cells and Thin Film Transistors Applications
指導教授： 李敏鴻
Lee, Min-Hung
學位類別： 碩士
Master
系所名稱： 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年： 2010
畢業學年度： 99
語文別： 中文
論文頁數： 108
中文關鍵詞： 應力行為 、異質接面 、非晶矽 、微晶矽
英文關鍵詞： Mechanical Stress, Heterojunction, Amorphous Silicon, Microcrystalline Silicon
論文種類： 學術論文
相關次數： 點閱：131  下載：0 
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    總目錄 第 一 章 、 緒 論 … … … … … … … … … … … … … … … … … . 1 1.1 非晶矽、微晶矽材料分 …………………………………………….1 1.1.1 非晶矽材料分析 …………………………………………….1 1.1.2 微晶矽材料分析 …………………………………………….2 1.2 非晶矽與微晶矽材料之應用 ……………………………………...3 1.2.1 異質接面太陽能電池 ……………………………………….3 1.2.2 可撓曲薄膜電晶體 ………………………………………….5 第二章、異質接面矽基太陽能電池原理與製作 ……………………..7 2.1 異質接面矽基太陽能電池簡介 …………………………………...7 2.2 異質接面矽基太陽能電池(HIT)設計原理 ……………………….10 2.2.1 傳統的異質接面太陽能電池(p+ a-Si/n type c-Si) ………...10 2.2.2 新型態異質接面太陽能電池原理 ………………………...11 2.2.3 表面粗糙化處理(textured) …………………………………13 2.2.4 背面電場(back surface filed BSF) ………………………….14 2.2.5 透明導電膜(transparent conductive oxide TCO) …………...16 2.2.6 原理總結 …………………………………………………...16 2-3 異質接面矽基(HIT)製程 ………………………………………...17 2.3.1 背面電場(BSF)效應之討論 ……………………………….20 2.3.2 不同沉積溫度、化學氧化物保護層與有無氫氣鈍化 ……21 2.3.3 不同矽晶圓品質與有無粗糙化之討論 …………………...23 2.3.4 結論 效率 13.82%異質接面太陽能電池 …………………26 第三章、模擬異質接面太陽能電池在應力下的特性 ………………27 3.1 構想背景與簡介 ………………………………………………….27 3-2 實驗設計 ………………………………………………………….28 3.3 異質接面太陽能電池模擬參數設定 …………………………….29 3.3.1 氫化非晶矽材料設定 ……………………………………...29 3.3.2 異質接面太陽能電池材料物理參數設定 ………………...32 3.4 實驗流程步驟 ……………………………………………………33 3.4.1 模擬 Sanyo 異質接面結構確定模型正確 …………………33 3.4.2 ANSYS 模擬各吸收層厚度在應力下的分佈 ………………34 3.4.3 計算形變量與能帶關係 ……………………………………36 3.4.4 太陽能電池在應力下的電性表現 …………………………36 3.5 結論 ……………………………………………………………….38 第四章、微晶矽薄膜電晶體機械與電的可靠度 …………………….39 4.1 研究背景簡介 …………………………………………………….39 4.2 微晶矽薄膜電晶體 ……………………………………………….41 4.3 下閘極微晶矽與非晶矽薄膜電晶體電性比較 ………………….42 4.3.1 下閘極微晶矽與非晶矽薄膜電晶體結構 ………………...42 4.3.2 HC 下閘極微晶矽與非晶矽薄膜電晶體電性表現 ……….43 4.3.3 PBTI 下閘極微晶矽與非晶矽薄膜電晶體電性表現 ……..45 4.3.4 DOS 解釋 Stress 後的現象 ………………………………..46 4.3.5 HC (hot carrier)與 PBTI (positive-bias temperature instability) 操作機制 ………………………………………………………………47 4.3.6 非晶矽與微晶矽在 HC、PBTI stress 物理特性整理 …….48 4.3.7 非晶矽與微晶矽下閘極薄膜電晶體穩定性結論 ………...50 4.4 上閘極微晶矽薄膜電晶體電與力可靠度分析 ………………….51 4.4.1 計畫流程 …………………………………………………...51 4.4.2 上閘極微晶矽薄膜電晶體製程 …………………………...53 4.4.3 討論通道長度與玻璃基板取下的電性 …………………..54 4.5 利用應力模擬討論微晶矽薄膜變晶體在應力的情況 ………….55 4.5.1 增加無內應力的 SiN 薄層 ………………………………..55 4.5.2 模擬改變彎曲曲率 ………………………………………..56 4.5.3 改變微晶矽的內應力 ……………………………………..57 4.5.4 改變微晶矽的楊氏係數 …………………………………..58 4.5.5 改變氮化矽的內應力 ……………………………………..59 4.5.6 改變氮化矽的楊氏系數 …………………………………..60 4.5.7 整理介面層的應力分佈 …………………………………..62 4.5.8 改變基板種類(PI、PET、Cu、Steel)的應力分布 ……….63 4.6 上閘極微晶矽薄膜電晶體機械應力分析 ………………………65 4.6.1 垂直與帄行通道應力電性分析 …………………………..65 4.6.2 垂直與帄行通道多次撓曲應力電性分析 ………………..66 4.6.3 上閘極微晶矽薄膜電晶體張應力多次撓曲電性分析 …...68 4.6.4 上閘極微晶矽薄膜電晶體壓應力多次撓曲電性分析 …...70 4.6.5 上閘極微晶矽薄膜電晶體在多次撓曲下可靠度分析 …...72 4.6.6 模擬多次撓曲下元件劣化機制 …………………………..74 4.7 上閘極微晶矽電晶體應力下 DC、AC 電流操作可靠度分析 ..77 4.8 結論 ………………………………………………………………79 第五章、總結與未來工作 ……………………………………………80 5.1 結論 ……………………………………………………………….80 5.1.1 異質接面太陽能 …………………………………………...80 5.1.2 微晶矽薄膜電晶體 ………………………………………...80 5.2 未來工作 ………………………………………………………….81 5.2.1 異質接面太陽能 …………………………………………...81 5.2.2 微晶矽薄膜電晶體 ………………………………………...82

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