電阻式記憶體屬於非揮發性記憶體，能夠於斷電後依然保存記憶，而因為製程與結構簡單、面積小、操作電壓低、切換速度快、使用壽命長，是目前擁有很高發展潛力的記憶體種類之一。在目前以過渡金屬的氧化物為材料的記憶體為主流，也在研究中取得相當多的成果。
但若要放在實際應用上，卻還是需要對電阻式記憶體的運作機制有更多的認識。
而本篇文章將討論工研院所製成之TiN/Ti/HfO2/TiN之雙極性電阻轉換RRAM元件，探究其在物理上的結構與其在物理上的特性，並對樣品在量測時施以不同的量測方式，包含不同的限電流、不同的SET時間與其他能夠探測其電性特性的量法，以此觀察樣品對這些參數的反應，並以此去探究、分析樣品於高電阻態、低電阻態、與兩者切換時的電流傳導機制，最終再利用所獲得、統計出的控制參數，使樣品得以較易發生量子化現象，並觀察與解釋樣品的電流量子化階梯。

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