我們在低溫環境並給予外加垂直磁場，進行對a-IGZO薄膜電晶體的測量，發現了正磁導率與負磁導率並存的現象，且並存比例會隨閘極電壓而變，這是由於弱局化(weak localization)與弱反局化效應(weak anti localization)在其中以不同的比例彼此競爭。我們分別研究了不同閘極電壓與不同溫度下的競爭模式，並將兩者所佔的權重化為實際數值α0 與α1進行分析。根據我們的研究，隨著閘極電壓上升，α0會微幅上升，但|α１|會有很明顯的上升，而隨著溫度上升，α0會在一定的區間中維持震盪，但|α１|則會快速下降。接著我們發現了即使是通道尺寸和ID–VG性質都顯著不同的樣品，其α0、α1都會與零磁場時的電導率有普適相關(universal dependence)。

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