本論文是利用射頻磁控濺鍍系統，分別濺鍍鋁、矽薄膜，經由熱退火方式，使鋁誘發矽形成p型多晶矽，於本質矽基板之上利用不同退火時間進而達到摻雜的目的;並及量測及分析p-type矽薄膜之電性。進而探討應用於n型矽基板上，製備成太陽能電池元件後並量測光電轉換特性。
並研究ZnO:Al (AZO)薄膜濺鍍於塑膠基板上，在不同的薄膜厚度量測其薄膜的電特性及光特性，得到一ρ=4 x 10-4Ω-cm、μ=21 cm2/V·s、 n=6.4 x1020 1/cm3、可見光部分穿透率 75% 等特性於1100 nm之ZnO:Al (AZO)薄膜。
最後分別使用AZO薄膜以及鋁製備於電極部分進行太陽能電池光電轉換量測，最終我們在Al/p-Si/n-Si wafer/Al 結構上獲得一開路電壓為0.41V，光電流為0.38 mA/cm2 ，轉換效率為0.1% 的太陽能光伏元件。

In this work, we fabricated ZnO:Al(AZO)/p-polycrystalline-Si solar cells on n-type silicon wafer. The p-type polycrystalline silicon films were prepared by aluminum-induced crystallization and doping. First, we deposited Aluminum and amorphous silicon bilayers on intrinsic silicon wafer using a rf- sputtering system. We changed the annealing times of the aluminum-induced crystallization to get good conducting p-type polycrystalline-Si films, and then deposited them on n-type silicon wafers to fabricate the p-n junction solar cells.
AZO thin films were grown on PET flexible plastic substrates at room temperature and optimize the growth conditions were optimized to improve the transparency and electrical properties. With the room-temperature growth conditions, the resistivity of 4.5  10-4 Ω cm, carrier concentration of 6.4  1020 cm-3, and transmittance of 75% for the 1100-nm-thick film were obtained.
AZO and Al films have been used to be the front electrodes for the AZO(Al)/p-polycrystalline-Si/n-silicon-wafer structured solar cells. Finally, an open circuit voltage of 0.41 V, a photocurrent of 0.38 mA, and a photoelectric conversion of 0.1% for the solar cells are obtained.

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