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研究生：	沈韋辰 Shen, Wei-Chen
論文名稱：	氧化鋅奈米柱陣列耦合侷域性銀奈米粒子表面電漿共振於氮化鎵藍光二極體效率提升之研究 A study of enhanced GaN light-emitting diodes’ effeciency by ZnO nanorods array coupling Ag nanoparticles localized surface plasmons resonance
指導教授：	李亞儒 Lee, Ya-Ju
學位類別：	碩士 Master
系所名稱：	光電工程研究所 Graduate Institute of Electro-Optical Engineering
論文出版年：	2015
畢業學年度：	103
語文別：	中文
論文頁數：	52
中文關鍵詞：	氮化鎵藍光二極體、氧化鋅奈米柱、銀奈米粒子、表面電漿子共振效應
英文關鍵詞：	GaN LED, ZnO Nanorods, Ag Nanoparticles, Localized Surface Plasmon Resonance
論文種類：	學術論文
相關次數：	點閱：140 下載：3
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本論文是利用射頻磁控濺鍍系統濺鍍一層30nm的氧化鋅晶種層在氮化鎵發光二極體表面，再輔以水熱法濃度0.03M的六水合硝酸鋅(Zn(NO3)2．6H2O)和0.03M六亞甲基四胺(CH2)6．N4 (hexamethylenetetrami- ne,HMTA)的混合水溶液中成長氧化鋅奈米柱，最後再把銀奈米粒子用以旋轉塗佈(500 轉/ 40 秒)的方式塗佈進氧化鋅奈米柱之間，再放在真空乾燥盒內以70℃/ 10 分鐘加熱乾燥。

銀奈米粒子能吸收部分氮化鎵無法透射出去的光轉成表面電漿，之後再藉由氧化鋅奈米柱將表面電漿傳導出去，進而提升氮化鎵發光二極體的光電轉換效率、外部量子效率、電激發光譜強度以及光激發螢光光譜強度。

In this study, we use magnetron sputtering system to grow a 30 nm ZnO thin film on the surface of GaN-based light-emitting diodes (LEDs) as the seed layer. The ZnO nanorods arrays were then grown by hydrothermal method with 0.03 M (Zn(NO3)2．6H2O) and 0.03 M (CH2)6．N4 (hexamethylenetetrami- ne,HMTA) compounds in a solution at 110℃ for 1 hour duration. After that, we spin coated Ag nanoparticles into ZnO nanorods by 500 r.p.m / 40 sec and baked the sample in the box with vacuum for 10 mins.

The primary function of Ag nanoparticles is to absorb the wave-guided light trapping in the LED device, which consequently increases the localized field via surface plasma resonance (SPR) effect. The photoexcitated electrons in Ag nanopartilces jump from ground state to excited states, followed by relaxation of the excited electrons, accompanied by radiative emission which further enhaces the light output power and the exteranl quantum efficiency of the LEDs.

摘要......................................................I
Abstract ................................................II
致謝....................................................III
目錄.....................................................IV
圖目錄................................................. VII
第一章 序論...............................................1
1-1 前言...............................................1
1-2 文獻回顧...........................................2
1-3 研究動機與目的.....................................4
第二章 實驗原理...........................................5
2-1 氧化鋅材料特性.....................................5
2-2 水熱法氧化鋅奈米柱的製備...........................7
2-3 光激發螢光發光原理(PL,Photoluminescent) ...........7
2-4拉曼光譜原理(Raman spectroscopy) ....................9
2-5射頻磁控濺鍍原理...................................11
2-6 光繞射原理(XRD, X-ray diffraction)................13
2-7 原子力顯微鏡原理(AFM, Atomic force microscope).....14
2-8 掃描式電子顯微鏡原理(SEM,Scanning electron microscop)16
2-9霍爾效應與四點探針量測..............................20
第三章 實驗步驟與設備....................................24
3-1 元件製備流程.......................................24
3-2 濺鍍系統...........................................25
3-3 氧化鋅水熱法製備...................................26
3-4 旋轉塗佈銀奈米粒子及加熱乾燥製備...................27
3-5 SEM量測............................................27
3-6 黑箱量測...........................................30
3-7 XRD 光繞射量測.....................................31
3-8 PL 光激發螢光發光量測..............................32
3-9 拉曼光譜量測.......................................33
3-10AFM 原子力顯微鏡量測.................................34
第四章結果與討論.........................................36
4-1 不同氧化鋅種子層生長水熱法氧化鋅奈米柱SEM分析比
較.................................................36
4-2 不同水熱法濃度及溫度生長氧化鋅奈米柱SEM分析比
較.................................................37
4-3銀奈米粒子吸收、穿透光譜及銀奈米粒子塗佈在氧化鋅奈米柱
之間拉曼光譜分析....................................38
4-4 有無加入銀奈米粒子氧化鋅奈米柱陣列應用於GaN LED之元件特性分析.........................................41
4-5 有無銀奈米粒子及氧化鋅種子層成長氧化鋅奈米柱陣列於GaN
之拉曼光譜提升之分析...............................42
4-6 有無加入銀奈米粒子氧化鋅奈米柱陣列應用於GaN LED之發光光譜分析.........................................43
4-7 有無加入銀奈米粒子氧化鋅奈米柱陣列應用於GaN LED之發光效率提升分析.....................................44
4-8 有無加入銀奈米粒子氧化鋅奈米柱陣列應用於GaN LED之外部量子效率提升分析.................................45
第五章結論...............................................47
第六章參考文獻...........................................48


                                

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