我們利用PR量測磷化銦鎵/砷化鎵量子井系統單層摻雜(delta-doped)的調
制光譜。發現在不同的溫度下，光譜譜形皆為清晰之Franz-Keldysh振盪(
FKO)。且溫度在75K到150K之間的光譜譜形，在靠近能隙附近有激子躍遷
的結構產生。單層摻雜的結果，不僅會在井中建立電場，同時也使原本的
位能井的井深更深且尖銳。分析FKO譜形，我們求得內建電場隨溫度變化
的關係曲線。由於光壓效應(effect of photovoltage)的影響，內建電場
會隨溫度下降而減少；這與實驗所得結果相符合。另一方面，我們用三角
井模型估算出最低的躍遷能量，和實驗觀測值亦相當接近。

We use the method of photo-refraction to measure modulation
spectra of delta-doped GaAs/GaInP quantum well system.All the
spectra clearly showed the Franz-Keldyshoscillation at different
temperature. By varying temperature from 75K to 150K,we found
the exciton transition near energy-gap.The effect of delta-doped
are not only built-in electric field, also making wellpotential
deeper and sharper.By analyzing Franz-Keldysh oscillation for
allspectra, we can deduce relation of built-in electric field
varying with temperature.Due to the effect of photovoltage, we
predict built-in electric field decreaseswhen lower sample
temperature,and ,as expect, it matches with experimental
results.We also use triangular well model to calculate the
lowest transition energy,andthis theoretical result is agree
with the energy deduced from experimental data.
We use the method of photo-refraction to measure modulation