近幾年，過渡金屬硫屬化合物因為具有能隙關係，比同樣具有二維結構的石墨烯更適合用在電晶體元件製作，因此吸引很研究學者的興趣。其中WSe2是屬於P型的半導體更特別引人關注，然而一直缺乏一個穩定可控制的摻雜技術，難度頗高。本篇將開發一個穩定可行的摻雜製程，利用共濺鍍製程技術加上後硒化處理。希望用這個方法能夠讓電晶體的載子濃度及載子遷移率提升，讓通道電阻及接觸電阻有效的降低。

Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained.

[1] X. Huang, W. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y. K. Choi, K. Asano, V. Subramanian, T. J. King, J. Bokor, and C. Hu, “Sub 50-nm FinFET: PMOS, ” IEEE Electron Device Letter, pp. 67-70 (1999).
[2] M. tachimori, “SIMOX Wafers(Silicon wafers with a thin superficial silicon film separated from the body by implanted oxygen, ” NIPPON STEEL TECHNICAL REOIRT No.73 APRIL, pp. 19-25 (1997).
[3] D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks, and M. C. Hersam, “Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides, ” ACS nano, vol. 8, no. 2, pp. 1102–1120 (2014).
[4] A. K. Geim, and I. V. Grigorieva, “Van der Waals heterostructures, ” Nature., vol. 499, pp. 419-425 (2013).
[5] A.K. Geim, and K.S. Novoselov, “THE RISE OF GRAPHENE, ” Nature Materials., p.183 – 191 (2007).
[6] Radisavljevi, Radenovi, Brivio, Giacometti, and Kis, “Single-layer MoS2 transistors, ” Nat Nano., vol. 6, pp. 147-150 (2011).
[7] D. Makarov, “CoPt and FePt magnetic alloys grown on van der Waals WSe2(0001) surfaces and on arrays of SiO2 spherical particles, ” PhD dissertation. zur Erlangung des akademischen Grades des Doktors der Naturwissenschaften (Dr. rer. nat.) an der Universität Konstanz Fachbereich Physik (2008).
[8] Y. H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.T. Lin, J.-K. Huang, M.-T. Chang, C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces, ” Nano Lett., vol. 13, no. 4, pp. 1852–1857 (2013).
[9] S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, and K. Kalantar-Zadeh, “Atomically thin layers of MoS2 via a two step thermal evaporation–exfoliation method, ” Nanoscale, vol. 4, no. 2, pp. 461–466 (2012).
[10] Y. Zhang, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate, ” Small, vol. 8, no. 7, pp. 966–971 (2012).
[11] Song, J.Park, J. Lee, W. Choi, T. Jung, H. Lee, C.W. Hwang, S.-H. Myoung, J.M. Jung, J.-H. Kim, ”Wafer-Scale,and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition, ” ACS Nano, vol. 7, pp. 11333-11340 (2013).
[12] K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang,H. Li, Y. Shi, H. Zhang, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates, ” Nano Lett., vol. 12, no. 3, pp. 1538–1544 (2012).
[13] J. Wilson, “LEED and AES study of the interaction of H2S and Mo (100), ” Surf.Sci., vol. 53, no. 1, pp. 330–340 (1975).
[14] Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, “Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary, ” ACS nano, vol. 7, no. 10, pp. 8963–8971 (2013).
[15] A. L. Elias, N. Perea-López, A. Castro-Beltran, A. Berkdemir, R. Lv, S. Feng,A. D. Long, T. Hayashi, Y. A. Kim, M. Endo, “Controlled synthesis and transfer of large-area WS2 sheets: From single layer to few layers, ” ACS nano, vol. 7, no. 6, pp. 5235–5242 (2013).
[16] H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi, and Ali Javey, ”High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts, ” Nano Lett. 12, pp. 3788−3792 (2012).
[17] L. Yang, K. Majumdar, Y. Du, H. Liu, H. Wu, M. Hatzistergos, Py Hung, R. Tieckelmann, W. Tsai, C. Hobbs, and P. D. Ye, ” High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kΩ•µm) and Record High Drain Current (460 µA/µm), ” VLSI-TSA, pp.1-2 (2014).
[18] H. Liu, A. T. Neal, Y. Du and Peide D. Ye” Fundamentals in MoS2 Transistors: Dielectric, Scaling and Metal Contacts, ” ECS., The Electrochemical Society, vol. 58, pp. 203-208 (2013).
[19] S. Chuang, C. Battaglia, A. Azcatl, S. McDonne, J. S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R. M. Wallace, A. Javey, “MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts, ” Nano Lett., vol. 14, pp. 1337−1342 (2014).
[20] S.M Sze, physics of Semiconductor Devices.p. 411 (1969).
[21] Sputter deposition/coating (2016)
https://zh.wikipedia.org/wiki/%E6%BA%85%E5%B0%84
[22] Atomic Force Microscope (2016)
https://zh.wikipedia.org/wiki/%E5%8E%9F%E5%AD%90%E5%8A%9B%E6%98%BE%E5%BE%AE%E9%95%9C
[23] Raman (2016)
https://zh.wikipedia.org/wiki/%E6%8B%89%E6%9B%BC%E5%85%89%E8%AD%9C%E5%AD%B8
[24] Alpha Step Profoliameter (2016)
http://www.twword.com/wiki/%E8%A1%A8%E9%9D%A2%E7%B2%97%E7%B3%99%E5%BA%A6
[25] Backend vacuum annealing furnace (2016)
https://en.wikipedia.org/wiki/Vacuum_furnace
[26] H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, and D. Baillargeat, “From Bulk to Monolayer MoS2 : Evolution of Raman Scattering, ” Adv. Funct. Mater., vol. 22, pp. 1385–1390 (2012).
[27] T. Tsirlina, Y. Feldman, M. Homyonfer, J. Sloan, J. Hutchison, and R. Tenne, “Synthesis and characterization of inorganic fullerene-like WSe2 material,” Fullerene science and technology, vol. 6, no. 1, pp. 157–165 (1998).
[28] W. J. Zhao, Z. R. Ghorannevis, K. K. Amarab, J. R. Pang, M. G. Toh, X. Zhang, C. Kloc, P. H. Tane, and G. Eda, “Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2, ” NANO Scale, vol. 5, pp. 9677-9683 (2013).