近年來，高科技生醫檢測元件及系統產品不斷更新與改良，其積體電路(Integrated Circuit, IC)晶片的需求也不斷增加。為有效提高產能，本研究結合先進脈衝雷射結構技術(Advanced pulse laser structuring techniques)進行生醫感測元件的研製與IC晶片的製程改良。本研究會採用奈秒脈衝雷射(Nanosecond pulsed laser, NS laser)與皮秒脈衝雷射(Picosecond pulsed laser, PS laser)技術，在微結構(Microstructures)和薄膜(Thin films)製程上進行探討，並利用雷射結構技術於堆疊元件(Stacked device)進行製程，研究元件之電特性變化。本研究使用的IC晶片是以矽(Silicon, Si)為基材，並由二氧化矽(Silicon dioxide, SiO2)、鋁(Aluminum, Al)和氮化矽(Silicon nitride, Si3N4)薄膜堆疊而成。藉由調控雷射參數進行實驗，顯示在能量密度為4.11 J/cm2時，該元件的電流值能提升至100 mA，證實脈衝雷射製程可有效提升元件的電特性。
此外，本研究利用脈衝雷射圖案化電極製程，進行酸鹼值(pH value)檢測元件開發，其結構是以氧化銦錫(Indium tin oxide, ITO)玻璃為基材，結合厚度400 nm的鋁和14 nm的氧化銦鎵鋅(Indium gallium zinc oxide, IGZO)薄膜研製而成，而為了增加元件檢測面積，會選用指叉狀電極(Interdigitated electrodes, IDEs)設計。本研究採用定電流(200 μA)方式進行量測，觀察pH濃度(pH 2-10)和不同指叉間距的電性變化。根據實驗結果，本研究完成pH檢測元件，其靈敏度(Sensitivity)最高可達56.67 mV，測試呈現良好的可靠度，且能實際應用於傷口檢測(pH 6.5-7.3)。

In recent years, the high-tech biomedical sensing and system products have been continuously updated and improved and the demand for integrated circuit (IC) chips has also been increasing. To effectively increase production capacity, the advanced pulse laser structuring techniques were used to fabricate the bio-sensing devices and improve the IC process. In this study, the nanosecond pulsed laser (NS laser) and picosecond pulsed laser (PS laser) were fabricated on the microstructure and thin-film processes. And the stacked devices were formed by the laser-structure technique, in which the electrical characteristics of devices must be investigated. The IC device used was based on silicon (Si) and stacked by thin films of silicon dioxide (SiO2), aluminum (Al), and silicon nitride (Si3N4). By controlling the experimental laser parameters, it was found that the current of IC device can be increased to 100 mA at 4.11 J/cm2, demonstrating the pulse laser process can effectively improve the electrical characteristics of IC device.
Additionally, the pH sensing device was fabricated by pulse laser-patterning process on electrode device. The structure device based on indium tin oxide (ITO) glass substrate stacked the thin-film layers of Al and indium gallium zinc oxide (IGZO), which can be 400 nm, and 14 nm, respectively. To increase the sensing region, the design of interdigitated electrodes (IDEs) was used. The constant current of 200 μA of the study was used to measure the pH concentration (pH 2-10) in the electrical changes at the different interdigital distances. According to the results, the development of pH sensing device indicated the good reliability, and its sensitivity was up to 56.67 mV for wound detection (pH 6.5-7.3).

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