二維過渡金屬二硫化物(2D TMD)材料以其出色的固有性質和巨大的電子應用潛力而聞名，尤其在記憶體應用方面更具潛力。最近的研究表明，基於二硫化鉬的元件通過將載流子儲存在功能性陷阱結構中展現出記憶特性。在這裡，我們提出了一種新的方法，通過照射具有不同軌道角動量(Orbital Angular Momentum, OAM)的渦旋光於二硫化鉬電晶體上，觀察其記憶特性。隨著拉蓋爾-高斯光束所給予的拓撲電荷(ℓ)增加，將有更多載流子從功能性陷阱結構中釋放，從而改變裝置通道中的載流子濃度。在MoS2電晶體上照射OAM光可以有效調節MoS2的電學特性，如光電流、遲滯窗口和載流子儲存性能等。在不同的光學特性條件下例如曝光時間、光強度和測量溫度，渦旋光仍然能獨立產生影響。我們對這個元件進行了記憶體特性的量測，展現出出色的耐久性和等待時間。此外，我們還觀察到不同結構的記憶體元件中，渦旋光能夠調控記憶體的現象。我們相信，透過軌道角動量光可調控的二硫化鉬記憶體元件可能為未來先進電子應用中的光學記憶體裝置提供新的操作自由度。

Two-dimensional transition metal dichalcogenide (2D TMD) material is well known not only in its great ability of intrinsic properties but also the huge potential electronic applications with memory applications. In recent research, MoS2 based device has exhibited the memory properties by storing the carriers in functional trap structure. Here, we provide a novel procedure by illuminating twisted light with different orbital angular momentum (OAM) on the MoS2 transistors to observe their memory characteristics. With the increasing number of topological charge given by Laguerre-Gaussian beam, more carriers will be released from the functional trap structures causing the changing of carrier concentration in the device’s channel. The illumination of OAM light on the MoS2 transistors can effectively modulate MoS2’s electrical properties such as photocurrent, hysteresis window and charge storage performance. Under different optical conditions, such as exposure time, light intensity, and measurement temperature, twisted light continues to independently exert its influence. We conducted measurements of the memory characteristics of this device, demonstrating excellent durability and retention time. Additionally, we observed evidence of twisted light modulation on the memory in memory devices with different structures. We believe that the controllable 2D-TMD-based transistors by twisted light may provide a new degree of freedom to operate the optical memory devices in advanced electronic applications in the future.

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