本論文在研究一維超導跟介電質的光子晶體能隙和週期性排列的缺陷模態性質及其應用。其中結構分別為 ABBA 和 CDABDC ，A為超導，B、C、D皆為介電質。
第二章研究超導和介電質的光子晶體產生能隙擴大和產生的缺陷模態。我們藉由調整超導和介電材料的厚度和週期性來產生不同的能隙範圍和寬度，並且結合兩種寬度使得光子晶體侷限電磁波的範圍提升，也調整其範圍來產生缺陷模態，並利用轉移矩陣法(TMM)，來研究其元件之特性，並利用透射率的分布情形去分析其缺陷模態之相關性質。
第三章研究超導和介電材料的雙週期性結構缺陷模態，就是結構 CDABDC ，模擬結果指出如果改變光子晶體的排列且想要找出好的defect波形來做濾波的用途，材料的厚度是主要的參數。至於週期數並不影響defect發生的位置，但是影響defect的穿透率，所以我們可以使用調整週期來增加或減少通道的穿透率以配合所需。

關鍵字 : 轉移矩陣法、缺陷模態、光子晶體、超導體

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