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| 研究生： |
林大鈞 |
|---|---|
| 論文名稱： |
三五族半導體奈米線之光譜研究 Optical studies of III-V semiconducting nanowires |
| 指導教授： | 劉祥麟 |
| 學位類別： |
碩士 Master |
| 系所名稱： |
物理學系 Department of Physics |
| 論文出版年： | 2004 |
| 畢業學年度： | 92 |
| 語文別： | 中文 |
| 論文頁數： | 145 |
| 中文關鍵詞： | 半導體 、奈米線 、光譜 |
| 論文種類： | 學術論文 |
| 相關次數： | 點閱：219 下載：6 |
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我們研究不同結構與成份之Ⅲ-Ⅴ族半導體(GaN, GaP, InP)奈米線的光譜特性，有助於了解其作為光電及電子材料之基礎科學相關問題。
首先，我們發現氮化鎵奈米線為烏采結構，磷化鎵與磷化銦為閃鋅礦結構，晶格常數等參數與塊材相近。其次，我們觀察到奈米線元素成份的组成比例大致為1:1，顯示其為高純度、高品質的實驗樣品。
由全頻光譜與拉曼散射光譜分析，我們發現奈米線之紅外光活性振動模與電子吸收帶與塊材相近，而聲子侷限模型可以解釋其拉曼活性峰紅位移與半高寬變寬的現象。此外，我們觀察到磷化鎵與磷化銦奈米線TO與LO振動模間有表面聲子振動模，並且利用兩個介電常數模型來驗證其頻率位置。隨著奈米線尺寸縮小，表面聲子模的頻率往低頻偏移，半高寬變寬，且其強度增強。
由共振拉曼散射光譜分析中，我們發現奈米線之某些聲子振動模的共振行為與電子躍遷有密切關係。最後，由變溫拉曼散射光譜分析中，我們觀察到奈米線光學振動模隨著溫度升高頻率有往低頻偏移，半高寬逐漸變寬的現象，此歸因於光學聲子衰減為兩聲學聲子。有趣地是，表面聲子模之溫度變化並不符合非諧效應的預測。
We report on structural, stoichiometric, and optical properties of high-purity and -quality Ⅲ-Ⅴ semiconductoring nanowires, such as GaN, GaP, and InP. The X-ray diffraction data and energy dispersive X-ray spectroscopy confirm that these wire-like structures are indeed GaN, GaP, and InP nanowires, and they can be indexed to hexagonal wurtzite structure and zinc blende structure. Optical reflectance and transmittance spectra of Ⅲ-Ⅴ semiconductoring nanowires reveal infrared-active phonons and electronic absorption bands. The nanosize dependences of Raman peak shift and the broadening of the phonon modes agree with those calculated on the basis of the phonon confinement model. In addition, a new Raman peak observed in the gap between the transverse and longtidinal optical phonons in GaP and InP nanowires is identified as the surface phonon mode using two dielectric response function model. The Raman-scattering studies of certain phonons show a different resonant enhanced behavior, which can be used to verify the electronic structures in these nanowires. Moreover, the temperature dependence of the phononic Raman spectra in these nanowires can be well described in terms of the phonon self-energy corresponding to two-phonon anharmonic processes.
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