本研究結合奈米球微影以及光輔助電化學蝕刻兩項技術之優點，用於製作高深寬比的奈米柱狀陣列。聚苯乙烯奈米球可藉由材料本身的自組裝效應，能輕易定義出奈米等級的圖形陣列，並可由球體尺寸的選擇與堆積層數的控制，有效地定義圖案形狀以及圖案尺寸，因此稱為奈米球微影術。同時，本研究將採用光輔助電化學蝕刻，以滿足奈米柱高深寬比的蝕刻需求，此技術有著易於形成奈米級孔洞的優點，其蝕刻深度與寬度之比更可達到250：1，優於感應耦合電漿離子蝕刻術(Inductively coupled plasma reactive ion etching, ICP-RIE)的蝕刻效果。兩項技術的結合可代替如電子束(Electron beam)、深紫外光(Deep ultraviolet, DUV)、X光(X-ray)微影技術，與感應耦合電漿離子蝕刻技術等昂貴的設備，因此非常適合用於製作高深寬比之奈米柱結構。
實驗的結果証實利用旋轉塗佈搭配震盪塗佈的方式，可將奈米球規則地排列於矽基板上，並且定義出單層與雙層奈米等級的圖案。而在光輔助電化學蝕刻的實驗中，証實了在添加界面活性劑的作用下，蝕刻蝕刻液的接觸角可降低至15度，具有超親水性的特性，並大幅改善擴孔現像，使得奈米級的高深寬比孔洞能夠輕易的產生。當使用5 V的蝕刻電壓與HF濃度2.5 wt%的蝕刻液，經過5分鐘的蝕刻後，能夠產生高度6.2 m，直徑為90 nm的高深寬比孔洞，而孔洞的深寬比可達到68:1。在光輔助電化學蝕刻中，當孔洞底端氟離子數量遠少餘電洞數量，孔洞側壁的蝕刻現象將非常明顯，並且蝕刻深度則開始隨著電壓的增加而減少。本實驗目前可製作出高度為1m深寬比達20:1~14:1的奈米柱。奈米柱將隨著奈米球的定義而排列，因此具有陣列化的排列現象。

關鍵字：奈米柱，奈米球，光輔助電化學蝕刻，自組裝。

The research has developed a novel method of Nanopillar array through the combination of integrating self-assembly nanosphere lithography and photo-assisted electrochemical etching technique.
The self-assembly nanosphere lithography technique can be used to define nano-pattern array by the novel coating method. The novel coating method of nanosphere can regular arrange nanosphere in some region of whole 1 cm2 wafer.
In experiment of photo-assisted electrochemical etching, surfactant can reduce contact angle of electrolyte and obtain high aspect ratio of nanohole easily. The highest aspect ratio of nanohole is 68:1. We have finished the novel fabrication process of nanopillar array without expensive equipments. Nanopillar can regular arranged, which dimensions is 70 nm~50 nm wide and 1000 nm tall (aspect ratio, 14~20:1).

Keywords: nanopillar, nanosphere, electrochemical etching, self-assembly.

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