本論文是利用射頻磁控共濺鍍(Co-Sputtering)系統製備p-type矽薄膜，利用不同功率的鋁靶和非晶矽靶同時濺鍍於玻璃基板上達到摻雜的目的之後進行熱退火，系統地分析及量測p-type矽薄膜之電性，進而探討應用於n-type silicon wafer 太陽能電池元件後的光學特性與電性分析。
並研究AZO(Al 1%)靶材濺鍍於玻璃基板上，在不同的退火溫度其薄膜的電性分析、光學特性，得到一ρ=8.5 x 10-4Ω-cm、μ=24 cm2/V•s、 n=3.1x1020 1/cm3、可見光部分穿透率 84% 的AZO薄膜，最後製備於太陽能電池元件之可行性，最終在Al/p-Si/n-Si wafer 結構上獲得一開路電壓為0.59V，光電流為0.07 mA/cm2 ，轉換效率為0.02% 的太陽能光伏元件。

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