摘要
在三五族奈米線的製程上，本實驗使用金和鉑來作為成長氮化鎵及磷化鎵奈米線所需的催化劑。相對於有機金屬前趨物，使用金和鉑催化生成的奈米線具有較佳的尺寸分佈及外觀，尤其是以鉑催化生成的磷化鎵奈米線，其直徑分佈相當均一，幾乎都介於80-90奈米之間。
另外，我們也對磷化鎵孿晶奈米線的結構及光學作深入的研究。結構分析方面，從高解析穿透式電子顯微鏡及電子繞射圖譜加以分析，此磷化鎵奈米線是由連續的面心立方堆積之孿晶結構所組成。在光致放光光譜的分析方面，一般的磷化鎵奈米線在大約2.43電子伏特處有一個較寬的訊號；氧化鋅奈米柱則在3.29電子伏特附近有一個明顯訊號。但是有趣的是磷化鎵孿晶奈米線的光致發光光譜，在大約1.7電子伏特附近出現了一個訊號，此訊號是一般的磷化鎵奈米線及氧化鋅奈米柱的光致放光光譜中所未見的。因此，關於磷化鎵孿晶奈米線的物理性質或應用，將有許多更深入的研究及探討。

Abstract
In the synthesis of III-V group nanowires, we used gold and platinum to be catalysts for the growth of gallium nitride (GaN) and gallium phosphide (GaP) nanowires. Compared with metal organic precursors, gold and platinum can be used as catalysts to produce GaN and GaP nanowires with better size distribution and morphologies. In particular, the GaP nanowires prepared by using platinum as a catalyst had uniform diameters in the range of 80-90 nm.
We paid attention to the structural and optical studies of GaP nanowires with twin-crystal structure. Structural characterization of the GaP nanowires indicated that the nanowires were continuous twin-crystal structure of face-center-cubic (fcc) confirmed by high-resolution transmission electron microscopy (HRTEM) and electron diffraction pattern. There exists a broad peak centered on 2.43eV in the PL spectra of common GaP nanowires and a sharp peak at 3.29eV in the PL spectra of ZnO arrays. It is interesting to note that there exists an extra peak at 1.7 eV in the PL spectra of GaP twin-crystal nanowires grown on ZnO arrays taken at low temperature. The GaP nanowires with a special structure can be investigated for further physical properties and potential applications.

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