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研究生： 賴奎元
Lai, Kwei-Yuan
論文名稱： 近場掃描微波顯微鏡的研發製作
Development of Near-field Scanning Microwave Microscope (NSMM)
指導教授： 盧志權
Lo, Chi-Kuen
學位類別： 碩士
Master
系所名稱： 物理學系
Department of Physics
論文出版年： 2015
畢業學年度： 104
語文別： 英文
論文頁數： 125
中文關鍵詞： 近場 、微波 、顯微鏡 、表面阻抗 、掃描穿隧電子顯微鏡 、局域鐵磁共振
英文關鍵詞： near-field, microwave, microscope, surface impedance, scanning tunneling microscope (STM), local ferromagnetic resonance (LFMR)
DOI URL： https://doi.org/10.6345/NTNU202204759
論文種類： 學術論文
相關次數： 點閱：216  下載：4 
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  •  上一筆

    • 鐵磁共振儀是研究自旋動力學不可或缺的強大工具。多年前本實驗室以向量網路分析儀(VNA)為基礎開發了鐵磁共振儀(FMR)。現在我們致力於將研究延伸到局域性的鐵磁共振量測(LFMR)，而近場描微波顯微鏡(NSMM)正是達成此目標的必要條件。

    文主要呈現自行研發製作掃描穿隧顯微鏡(STM)和近場掃描微波顯微鏡(NSMM)的過程，包含兩套顯微鏡架設所需的核心理論、儀器介紹、開發過程。最後，以特製的樣品來檢驗STM與NSMM的解析度與靈敏度。

    In order to achieve surface impedance topography and submicron level magnetic domain image as well as extend our greatest interest and expertise of spin dynamic measurement, so called ferromagnetic resonance (FMR), to local ferromagnetic resonance measurement(LFMR), we are dedicated to developing a near-field scanning microwave microscope (NSMM).

    Self-configured scanning tunneling microscope (STM) and NSMM employing RHK R9 SPM controller, n.point C.300 piezoelectric stage and Agilent N5230C network analyzer are demonstrated in this dissertation. Developmental processes can be mainly divided into STM part and NSMM part. In STM part, designs of main body, vibration isolation, automatic approach system, and tip fabrication are demonstrated. In NSMM part, two different configurations adopting microwave components, vector network analyzer (VNA), and NI my DAQ, are discussed. Finishing constructing, various samples were employed to test performance of the instruments. Cu-coated 4.7 GB DVD fabricated by pulse laser deposition (PLD) was used as STM test sample. For NSMM’s test samples, Au/Si alternatively stripped samples with three different dimensions, 25 um/ 25 um, 10 um/ 10 um, and 2 um/ 18 um, were fabricated by electron beam lithography (EBL) and vacuum thermal evaporation deposition (VTED). An AFM standard silicon test sample with dimensions of 5 um in x, y and 180 nm in z was also scanned to discriminate the influence of 100-nm thickness of Au strips from surface impedance.

    Hundred-nanometer spatial resolution has been achieved by our STM with set-point current 0.8 nA and bias voltage 1.5 V. A set of chemically-etching equipment are also developed and are capable of producing sharp tips with apex diameter less than 100 nm under parameters of 4 V KOH, 8 V etching voltage, and 2 V cut-off voltage. This apex is very ideal for scanning probe microscope (SPM) uses. Most critically, the self-developed NSMM configuration using VNA, PC and NI my DAQ. This novel yet simple configuration enables our NSMM to miraculously accomplishλ/10000-wavelength-relative resolution as well as sensitivity less than 0.01 dB while working over 13 GHz.

    Table of Contents Acknowledgement V Abstract VI List of Figures VII 1 Preface 1 2 Principle 3 2.1 Scanning tunneling microscope (STM) 3 2.1.1 History and overview 3 2.1.2 Tunneling effect 6 2.1.3 Vibration isolation theory 10 2.1.4 Signal ground techniques 13 2.2 Near-field scanning microwave microscope (NSMM) 17 2.2.1 Historical review 18 2.2.2 Transmission line theory 19 2.2.3 Near-field interaction 25 2.2.4 Correlation between S11 and surface impedance 27 3 Instrumentation 29 3.1 Introduction 29 3.2 STM 30 3.2.1 SPM controller and current preamplifier 30 3.2.2 Piezoelectric stage and controller 32 3.2.3 Stepper motor and motor drive 33 3.2.4 Sample stage 34 3.2.5 Tip holder 35 3.2.6 Tip and tip-fabricating equipment 36 3.3 NSMM 38 3.3.1 Network analyzer 38 3.3.2 Bias tee 39 3.3.3 Diode detector 42 3.3.4 Circulator 43 3.3.5 NI my DAQ 44 3.3.6 Electromagnet 45 4 Developmental Process and Result 46 4.1 Introduction 46 4.2 Build the STM 47 4.2.1 Main body 48 4.2.2 Automatic approach system 50 4.2.3 Vibration isolation 53 4.3 Seek for the best tip-etching parameter 56 4.3.1 6M KOH 56 4.3.2 4M KOH 58 4.4 STM test sample fabrication 59 4.5 Noise reduction 60 4.6 NSMM test sample fabrication 63 4.7 Transform STM into NSMM 65 4.7.1 Introduction 65 4.7.2 Narrowband bias tee, diode detector and circulator 66 4.7.3 Broadband bias tee, NI my DAQ and PC 69 4.8 Results of measurement and demonstration of instruments 72 4.8.1 Introduction 72 4.8.2 STM 73 4.8.3 NSMM 76 5 Conclusions and Outlook 81 5.1 Conclusions 81 5.2 Outlook 82 Reference 83 Appendix A. Rev9 dashboard and IHDL workbench 86 Appendix B. LabVIEW program 88 B.1 Stepper motor control for automatic approach (ori R9Vi.vi) 88 B.2 Incorporation for VNA and R9 SPM controller (new SCAN test.vi) 89 Appendix C. Experimental Steps for Operating Instruments 92 C.1 Experimental steps for the STM 92 C.2 Experimental steps for NSMM 96 Appendix D. SolidWorks drawings 98

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