依據中央研究院物理所鄭天佐實驗室在氧誘發銥單原子針成長的最新研究成果，以統計分析方法，定性分析不同退火條件及氧被覆量等，對銥單原子針(210)，{311}，(110)三面金字塔奈米結構形成、對稱性、原子堆疊及面積比例偏差等重要議題的影響做全面性且客觀地評估，並嘗試找出最佳的單原子針成長條件。由分析結果顯示，當氧曝氣量為60 Langmuirs，以510℃退火5分鐘，能得到最佳的原子堆疊結構。

In this study, we analyze the raw data taken by Prof. Tsong’s laboratory for preparation of iridium single-atom tips (Ir-SATs). The Ir-SATs formation is known a complex function of surface cleanness, annealing conditions and oxygen exposure. To find out the optimum condition, based on the experimental results, statistical approaches are used to systematically qualify the effects of processing parameters on the final results of Ir-SATs formation. According to the idealized atomic stacking model, we define the deviations of pyramidal symmetry, stacking ratio, and area ratio to objectively evaluate the perfectibility of the single-atom tip. The results indicate that an idealized Ir-SAT can be easily obtained if oxygen exposure is 60 L and after a 510℃/5 min. mild annealing.

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