我們是以光調制吸收光譜(PR)，對半導體材料氮銻砷化鎵做探討。在光調制光譜的變溫實驗裡，我們引用了Double BAC Model
確定了氮銻砷化鎵的能隙。此外也發現了在能隙以下，存在一個可能是侷限態的躍遷訊號，藉由參考了一些處在侷限態的載子隨溫度變化的相關理論分析與模型，得知在高溫時侷限能態會逐漸被載子所佔滿 ，可以解釋侷限能態的躍遷能量隨溫度變化的情形。
在使用不同波長雷射為調制源的光調制光譜，經過比較兩不同波長雷射得到的實驗結果，可以得知我們所量測到的調制訊號，分別來自材料氮銻砷化鎵本身，以及來自於砷化鎵基板與材料氮銻砷化鎵的界面附近。此外我們也藉著比較摻雜不同銻與氮濃度的樣品的實驗結果，來了解摻雜濃度對材料的影響。

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