在本論文中，我們利用超快脈衝光源雷射波長800nm，藉由控制高精度奈米壓電移動台，以及高倍率高數值孔徑的油鏡(100x, NA：1.4) 將雷射光聚焦至相變化薄膜Ge2Sb2Te5。我們可以控制奈米移動台在相變化薄膜上寫下結晶態的二維結構，從實驗結果我們製備圓陣列、手性結構、網狀結構。
同時我們也對不同相態的相變化薄膜Ge2Sb2Te5進行乾式蝕刻與濕式蝕刻的研究。並利用乾式蝕刻與濕式蝕刻對不同相態的相變化薄膜有良好的選擇性，可以將原本製備在相變化薄膜Ge2Sb2Te5上的圖案轉印至金薄膜上。
此方法可以應用在奈米學方面的研究，除了對於目前科學研究，未來也可以藉由本方法製備出商業化的表面電漿的光學元件或裝置。

In this thesis, we use Ti:sapphire laser with wavelength 800nm, and focus the laser on phase-change Ge2Sb2Te5 thin film by high magnification and high number aperture oil objective lens(100x, NA：1.4). By controlling the high precision piezo nano-stage, we can product any crystalline two-dimensional structure on as-deposited state of Ge2Sb2Te5 thin film. The result of the experiment shows that we can fabricate the holes array, chiral structure, and net structure.
In addition to discussing the role of laser and phase-change material, we also studied selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH and an inert gas of Argon. Finally we can transfer the pattern on thin film Ge2Sb2Te5 to thin film gold by good selective etching properties between different phases of Ge2Sb2Te5 thin film.
The method can be applied in the field of Nano Optics, and it is also a cost-effective tool to fabricate the commercial metamaterial device in the future.

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